FDD6637 Model Download Search Results
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FDD6637
onsemi
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1 | RDS(ON) = 18 mΩ @ VGS = -4.5 V ; RDS(ON) = 11.6 mΩ @ VGS = -10 V ; High performance trench technology for extremely low RDS(ON); -55 A, -35 V ; RoHS Compliant | Other | FDD6637 |
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FDD6637
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 13A I(D), 35V, 0.0116ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | FDD6637 |
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FDD6637
Rochester Electronics LLC
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1 | 13A, 35V, 0.0116ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3 | FDD6637 |
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FDD6637-G
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 55A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET | FDD6637-G |
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FDD6637-F085
onsemi
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1 | P-Channel PowerTrench® MOSFET, -35V, -21A, 18mΩ, TO-252 3L (DPAK), 2500-REEL, Automotive Qualified | FDD6637-F085 |
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FDD6637_F085
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 21A I(D), 35V, 0.0116ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | FDD6637_F085 |
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FDD6637_F085
onsemi
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1 | -35V, -21A, 11.6mΩ, DPAK P-Channel PowerTrench®, TO-252 3L (DPAK), 30000-TAPE REEL | FDD6637_F085 |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to252_3.jpg"])
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