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FDD7N25LZTM
onsemi
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1 | 100% avalanche tested; RDS(on) = 430mΩ (Typ.)@ VGS = 10V, ID = 3.1A; RoHS compliant; Low gate charge (Typ. 12nC); Low Crss (Typ. 8pF); Improved dv/dt capability; ESD improved capability | Other | FDD7N25LZTM |
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FDD7N25LZTM
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 6.2A I(D), 250V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | FDD7N25LZTM |
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