FDMS8018 Model Download Search Results
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FDMS8018
onsemi
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1 | Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A ; RoHS Compliant ; Advanced Package and Silicon combination for low rDS(on) and high efficiency ; Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 26 A ; MSL1 robust package design ; 100% UIL tested ; Next generation enhanced body diode technology, engineered for soft recovery | Other | FDMS8018 |
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FDMS8018
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 30A I(D), 30V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | FDMS8018 |
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