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Image Part Number D.S Description Package Category Prices / Stock Model Action
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FDN304PZ onsemi
1 RDS(ON) = 100 mΩ @ VGS = -1.8V; RDS(ON) = 52 mΩ @ VGS = -4.5V; High performance trench technology for extremelylow RDS(ON); ESD protection diode; -2.4A, -20V; Fast switching speed; SuperSOT™ -3 provides low RDS(ON) and 30% higherpower handling capability than SOT23 in the samefootprint; RDS(ON) = 70 mΩ @ VGS = -2.5V SOT23 (3-Pin) FDN304PZ 1 Download Model
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FDN304PZ Fairchild Semiconductor Corporation
1 Small Signal Field-Effect Transistor, 2.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET FDN304PZ 0 Build or Request
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FDN304PZ Rochester Electronics LLC
1 2400mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-3 FDN304PZ 0 Build or Request
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FDN304PZ_NL Fairchild Semiconductor Corporation
1 Small Signal Field-Effect Transistor, 2.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET FDN304PZ_NL 0 Build or Request
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