FDN8601 Model Download Search Results
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FDN8601
onsemi
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1 | Fast Switching Speed; Max rDS(on) = 109 mΩ at VGS = 10 V, ID = 1.5 A; High Power and Current Handling Capability in a Widely Used Surface Mount Package; Max rDS(on) = 175 mΩ at VGS = 6 V, ID = 1.2 A; RoHS Compliant; High Performance Trench Technology for Extremely Low rDS(on); 100% UIL Tested | SOT23 (3-Pin) | FDN8601 |
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FDN8601
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 2.7A I(D), 100V, 0.109ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | FDN8601 |
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FDN8601
Rochester Electronics LLC
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1 | 2700mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SUPERSOT-3 | FDN8601 |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/sot23_3.jpg"])
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