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FDP090N10
onsemi
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1 | Fast switching speed; Low Gate Charge; RoHS compliant; High performance trench technology for extremely low RDS(on) ; High power and current handling capability ; RDS(on) = 7.2mΩ ( Typ.) @ VGS = 10V, ID = 75A | Transistor Outline, Vertical | FDP090N10 |
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FDP090N10-SW82211
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor | FDP090N10-SW82211 |
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FDP090N10
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 75A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | FDP090N10 |
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