FDP33 Model Download Search Results
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FDP33N25
onsemi
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1 | Low Crss ( Typ. 39pF); Low gate charge ( Typ. 36.8nC); RDS(on) = 94mΩ ( Max.)@ VGS = 10V, ID = 16.5A; 100% avalanche tested | Transistor Outline, Vertical | FDP33N25 |
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FDP33N25
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 33A I(D), 250V, 0.094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | FDP33N25 |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to220ab_3.jpg"])
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