FDP36 Footprint, Symbol and 3D Model search results

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Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
FDP3682 onsemi	1	UIS Capability (Single Pulse and Repetitive Pulse); Qg(tot) = 18.5nC (Typ.), VGS = 10V; Low Miller Charge; Low QRR Body Diode; RDS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 32A	Transistor Outline, Vertical	FDP3682	3D model available Symbol and footprint available 3	1 Download Model
FDP3682 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 6A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FDP3682	3D model not available Symbol and footprint not available 0	0 Build or Request
FDP3672 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 5.9A I(D), 105V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FDP3672	3D model not available Symbol and footprint not available 0	0 Build or Request
FDP3682 Rochester Electronics LLC	1	6A, 100V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN		FDP3682	3D model not available Symbol and footprint not available 0	0 Build or Request

FDP3682_NL Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 6A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FDP3682_NL	3D model not available Symbol and footprint not available 0	0 Build or Request
FDP3632_NL Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FDP3632_NL	3D model not available Symbol and footprint not available 0	0 Build or Request
FDP3672_NL Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 5.9A I(D), 105V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FDP3672_NL	3D model not available Symbol and footprint not available 0	0 Build or Request
FDP3652 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FDP3652	3D model not available Symbol and footprint not available 0	0 Build or Request
FDP3632 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FDP3632	3D model not available Symbol and footprint not available 0	0 Build or Request
FDP3651U onsemi	1	Power Field-Effect Transistor, 80A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FDP3651U	3D model not available Symbol and footprint not available 0	0 Build or Request
FDP3632 onsemi	1	Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FDP3632	3D model not available Symbol and footprint not available 0	0 Build or Request
FDP3652 Rochester Electronics LLC	1	9A, 100V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN		FDP3652	3D model not available Symbol and footprint not available 0	0 Build or Request
FDP3651U Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 80A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FDP3651U	3D model not available Symbol and footprint not available 0	0 Build or Request
FDP3652_NL Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FDP3652_NL	3D model not available Symbol and footprint not available 0	0 Build or Request
FDP3672 onsemi	1	Power Field-Effect Transistor, 5.9A I(D), 105V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FDP3672	3D model not available Symbol and footprint not available 0	0 Build or Request

FDP3682_NL Rochester Electronics LLC	1	6A, 100V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN		FDP3682_NL	3D model not available Symbol and footprint not available 0	0 Build or Request
FDP3652 onsemi	1	Low Qrr Body Diode ; Low Miller Charge ; rDS(ON) = 14mΩ(Typ.), VGS = 10V, ID = 61A ; Qg(tot) = 41nC (Typ.), VGS = 10V ; UIS Capability (Single Pulse and Repetitive Pulse)		FDP3652	3D model available Symbol and footprint not available 1	1 Download Model
FDP-36-T Lapp Group	1	Board Connector, 36 Contact(s), 2 Row(s), Male, 0.1 inch Pitch, Solder Terminal, Receptacle		FDP-36-T	3D model not available Symbol and footprint not available 0	0 Build or Request
FDP-36-G Lapp Group	1	Board Connector, 36 Contact(s), 2 Row(s), Male, 0.1 inch Pitch, Solder Terminal, Receptacle		FDP-36-G	3D model not available Symbol and footprint not available 0	0 Build or Request

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