FDP61 Model Download Search Results
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FDP61N20
onsemi
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1 | 100% avalanche tested; Low gate charge ( Typ. 58nC); Low Crss ( Typ. 80pF); RDS(on) = 41mΩ ( Max.)@ VGS = 10V, ID = 30.5A | Transistor Outline, Vertical | FDP61N20 |
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FDP61N20
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 61A I(D), 200V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | FDP61N20 |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to220ab_3.jpg"])
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