FDPF6 Model Download Search Results
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FDPF680N10T
onsemi
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1 | RoHS Compliant; RDS(on) = 54mΩ ( Typ.) @ VGS = 10V, ID = 6A; Fast Switching Speed; Low Gate Charge; High Performance Trench Technology for Extremely Low RDS(on); High Power and Current Handling Capability | Transistor Outline, Vertical | FDPF680N10T |
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FDPF680N10T
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 12A I(D), 100V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | FDPF680N10T |
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FDPF6N60ZUT
onsemi
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1 | Power Field-Effect Transistor, 4.5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | FDPF6N60ZUT |
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FDPF6N60ZUT
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 4.5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | FDPF6N60ZUT |
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FC4STFDPF6.0
Fox Electronics
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1 | Parallel - Fundamental Quartz Crystal, 6MHz Nom | FC4STFDPF6.0 |
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FC4STFDPF6.000001
Fox Electronics
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1 | Parallel - Fundamental Quartz Crystal, 6.000001MHz Nom | FC4STFDPF6.000001 |
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FC4STFDPF6.000
Fox Electronics
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1 | Parallel - Fundamental Quartz Crystal, 6MHz Nom | FC4STFDPF6.000 |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to220ab_3.jpg"])
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