FDV305N Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FDV305N onsemi	1	RDS(ON) = 300 mΩ @ VGS = 2.5 V; High performance trench technology for extremelylow RDS(ON); Low gate charge; 0.9 A, 20 V; Fast switching speed; RDS(ON) = 220 mΩ @ VGS = 4.5 V	SOT23 (3-Pin)	FDV305N	3D model available Symbol and footprint available 3	1 Download Model
	FDV305N Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 0.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDV305N	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDV305N Rochester Electronics LLC	1	900mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET		FDV305N	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDV305ND87Z Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 0.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDV305ND87Z	3D model not available Symbol and footprint not available 0	0 Build or Request

	FDV305NL99Z Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 0.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDV305NL99Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDV305N_NL Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 0.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDV305N_NL	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDV305NS62Z Fairchild Semiconductor Corporation	1	Small Signal Field-Effect Transistor, 0.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FDV305NS62Z	3D model not available Symbol and footprint not available 0	0 Build or Request

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