FQB4N Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FQB4N80TM onsemi	1	3.9A, 800V, RDS(on) = 3.6Ω(Max.) @VGS = 10 V, ID = 1.95A; Low Crss ( Typ. 8.6pF); RoHS compliant; Low gate charge ( Typ. 19nC); 100% avalanche tested	Other	FQB4N80TM	3D model available Symbol and footprint available 3	1 Download Model
	FQB4N20 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.6A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB4N20	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQB4N50TM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.4A I(D), 500V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB4N50TM	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQB4N80TM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB4N80TM	3D model not available Symbol and footprint not available 0	0 Build or Request

	FQB4N25 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.6A I(D), 250V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB4N25	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQB4N90 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 4.2A I(D), 900V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB4N90	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQB4N90TM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 4.2A I(D), 900V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB4N90TM	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQB4N25TM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.6A I(D), 250V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB4N25TM	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQB4N60TM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 4.4A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB4N60TM	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQB4N80 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB4N80	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQB4N20TM Rochester Electronics LLC	1	3.6A, 200V, 1.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3		FQB4N20TM	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQB4N60 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 4.4A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB4N60	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQB4N20LTM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.8A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB4N20LTM	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQB4N20TM Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.6A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB4N20TM	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQB4N50 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.4A I(D), 500V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB4N50	3D model not available Symbol and footprint not available 0	0 Build or Request

	FQB4N20L Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.8A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB		FQB4N20L	3D model not available Symbol and footprint not available 0	0 Build or Request

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