FQU4P Model Download Search Results
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FQU4P40
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 2.7A I(D), 400V, 3.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | FQU4P40 |
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FQU4P25
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 3.1A I(D), 250V, 2.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | FQU4P25 |
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FQU4P40TU
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 2.7A I(D), 400V, 3.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | FQU4P40TU |
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FQU4P25TU
Rochester Electronics LLC
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1 | 3.1A, 250V, 2.1ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 | FQU4P25TU |
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FQU4P25TU
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 3.1A I(D), 250V, 2.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | FQU4P25TU |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to251_3.jpg"])
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