HCT81 Model Download Search Results
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HCT81017EAL-E
Bourns
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1 | 8.0mm Clearance and Creepage Transformer, 5.0kVDC,-40℃ to +125℃ | Other | HCT81017EAL-E |
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HCT810
TT Electronics Resistors
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1 | Power Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | HCT810 |
0
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HCT81017EAL
Bourns Inc
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1 | Datacom Transformer, ISOLATION Application(s), 10:17 | HCT81017EAL |
0
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HCT810
TT Electronics OPTEK Technology
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1 | Power Field-Effect Transistor, 0.01A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | HCT810 |
0
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![Part Image](["https://www.mouser.com/images/bourns/images/HCT80910EAL_SPL.jpg",null,null])
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