IM647 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Prices / Stock	Model	Action
	IM6472-32L Hewlett Packard Co	0	RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET	IM6472-32L	3D model not available Symbol and footprint not available 0	0 Build or Request
	IM6472-4L Agilent Technologies Inc	1	Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET	IM6472-4L	3D model not available Symbol and footprint not available 0	0 Build or Request
	IM6472-16L Agilent Technologies Inc	1	Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET	IM6472-16L	3D model not available Symbol and footprint not available 0	0 Build or Request
	IM6472-8L Hewlett Packard Co	1	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET	IM6472-8L	3D model not available Symbol and footprint not available 0	0 Build or Request

	IM6472-4L Hewlett Packard Co	1	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET	IM6472-4L	3D model not available Symbol and footprint not available 0	0 Build or Request
	IM6472-16L Hewlett Packard Co	1	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET	IM6472-16L	3D model not available Symbol and footprint not available 0	0 Build or Request
	IM6472-8L Agilent Technologies Inc	1	Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET	IM6472-8L	3D model not available Symbol and footprint not available 0	0 Build or Request
	IM6472-32L Agilent Technologies Inc	1	Power Field-Effect Transistor, 28A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET	IM6472-32L	3D model not available Symbol and footprint not available 0	0 Build or Request
	IM6471-3 Avantek Inc	1	Transistor	IM6471-3	3D model not available Symbol and footprint not available 0	0 Build or Request
	TIM6472-25UL Toshiba America Electronic Components	1	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET	TIM6472-25UL	3D model not available Symbol and footprint not available 0	0 Build or Request
	EIM6472-4 Excelics Semiconductor Inc	1	Amplifier	EIM6472-4	3D model not available Symbol and footprint not available 0	0 Build or Request
	TIM6472-14L Toshiba America Electronic Components	1	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET	TIM6472-14L	3D model not available Symbol and footprint not available 0	0 Build or Request
	TIM6472-16 Toshiba America Electronic Components	1	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET	TIM6472-16	3D model not available Symbol and footprint not available 0	0 Build or Request
	TIM6472-8SL Toshiba America Electronic Components	1	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET	TIM6472-8SL	3D model not available Symbol and footprint not available 0	0 Build or Request
	TIM6472-7L Toshiba America Electronic Components	1	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET	TIM6472-7L	3D model not available Symbol and footprint not available 0	0 Build or Request

	TIM6472-4 Toshiba America Electronic Components	1	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET	TIM6472-4	3D model not available Symbol and footprint not available 0	0 Build or Request
	TIM6472-6UL Toshiba America Electronic Components	1	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET	TIM6472-6UL	3D model not available Symbol and footprint not available 0	0 Build or Request
	TIM6472-60SL Toshiba America Electronic Components	1	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET	TIM6472-60SL	3D model not available Symbol and footprint not available 0	0 Build or Request
	TIM6472-30L Toshiba America Electronic Components	1	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET	TIM6472-30L	3D model not available Symbol and footprint not available 0	0 Build or Request
	TIM6472-4L Toshiba America Electronic Components	1	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET	TIM6472-4L	3D model not available Symbol and footprint not available 0	0 Build or Request
	TIM6472-8 Toshiba America Electronic Components	1	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET	TIM6472-8	3D model not available Symbol and footprint not available 0	0 Build or Request
	TIM6472-16EL Toshiba America Electronic Components	1	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET	TIM6472-16EL	3D model not available Symbol and footprint not available 0	0 Build or Request
	TIM6472-30SL Toshiba America Electronic Components	1	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET	TIM6472-30SL	3D model not available Symbol and footprint not available 0	0 Build or Request
	TIM6472-8L Toshiba America Electronic Components	1	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET	TIM6472-8L	3D model not available Symbol and footprint not available 0	0 Build or Request
	IM-6470UH+-5%B08 Vishay Intertechnologies	1	General Purpose Inductor, 470uH, 5%, 1 Element, Iron-Core	IM-6470UH+-5%B08	3D model not available Symbol and footprint not available 0	0 Build or Request
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