IPD50N06S4L-12 Model Download Search Results
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IPD50N06S4L-12
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 50A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | IPD50N06S4L-12 |
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IPD50N06S4L12ATMA2
Infineon
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1 | 60V, N-Ch, 12 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T2 | Other | IPD50N06S4L12ATMA2 |
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IPD50N06S4L12ATMA1
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 50A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | IPD50N06S4L12ATMA1 |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to252_4.jpg"])
![Part Image](["https://componentsearchengine.com/Images/9/IPD50N06S4L12ATMA2.jpg",null,"//content.supplyframe.com/images/process/fit-in/100x100/p/1588_TO252-3.jpg"])
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