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IPI020N06N
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 29A I(D), 60V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | IPI020N06N |
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IPI020N06NAKSA1
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 29A I(D), 60V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | IPI020N06NAKSA1 |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to262aa_3.jpg"])
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