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IRF3710PBF
VBsemi Electronics Co Ltd
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1 | N-Channel 100-V MOSFET with 70 A continuous drain current, 0.017 ohm drain-source on-resistance at 10 V gate voltage, 175 °C maximum junction temperature, and TO-220AB package for high-efficiency power applications. | IRF3710PBF |
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IRF3710PBF
Infineon
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1 | MOSFET N-Channel 100V 57A TO220AB Infineon IRF3710PBF N-channel MOSFET Transistor, 57 A, 100 V, 3-Pin TO-220AB | Transistor Outline, Vertical | IRF3710PBF |
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IRF3710PBF
International Rectifier
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1 | Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF3710PBF |
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