IRF640NPBF Model Download Search Results
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IRF640NPBF
VBsemi Electronics Co Ltd
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1 | N-Channel 200 V MOSFET with 175 °C junction temperature, 0.150 ohm RDS(on) at VGS = 10 V, designed for primary side switch applications, compliant to RoHS Directive 2002/95/EC. | IRF640NPBF |
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IRF640NPBF
Infineon
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1 | MOSFET N-Channel 200V 18A TO220AB Infineon IRF640NPBF N-channel MOSFET Transistor, 18 A, 200 V, 3-Pin TO-220AB | Transistor Outline, Vertical | IRF640NPBF |
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IRF640NPBF
International Rectifier
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1 | Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF640NPBF |
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![Part Image](["https://componentsearchengine.com/Images/9/IRF640NPBF.jpg",null,null])
![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to220ab_3.jpg"])
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