ISL9V2040D3ST Model Download Search Results
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ISL9V2040D3ST
onsemi
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1 | SCIS Energy = 200 mJ at TJ = 25°C; Logic Level Gate Drive; Space-Saving D - Pak Package Available | Other | ISL9V2040D3ST |
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ISL9V2040D3ST
Fairchild Semiconductor Corporation
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1 | Insulated Gate Bipolar Transistor, 10A I(C), 390V V(BR)CES, N-Channel, TO-252AA | ISL9V2040D3ST |
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ISL9V2040D3ST
Rochester Electronics LLC
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1 | 10A, 390V, N-CHANNEL IGBT, TO-252AA, PLASTIC,DPAK-3 | ISL9V2040D3ST |
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ISL9V2040D3STV
onsemi
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1 | Insulated Gate Bipolar Transistor, 10A I(C), 390V V(BR)CES, N-Channel, TO-252AA | ISL9V2040D3STV |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to252_3.jpg"])
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