KSE80 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
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KSE802 onsemi
1 Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin KSE802 0 Build or Request
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KSE800 Fairchild Semiconductor Corporation
1 Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin KSE800 0 Build or Request
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KSE802 Fairchild Semiconductor Corporation
1 Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin KSE802 0 Build or Request
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KSE800S Fairchild Semiconductor Corporation
1 Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin KSE800S 0 Build or Request
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KSE803 onsemi
1 Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin KSE803 0 Build or Request
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KSE801 onsemi
1 Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin KSE801 0 Build or Request
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KSE803 Fairchild Semiconductor Corporation
1 Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin KSE803 0 Build or Request
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KSE800STU Fairchild Semiconductor Corporation
1 Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin KSE800STU 0 Build or Request
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KSE801STU Fairchild Semiconductor Corporation
1 Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin KSE801STU 0 Build or Request
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KSE801 Fairchild Semiconductor Corporation
1 Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin KSE801 0 Build or Request
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KSE802 Samsung Semiconductor
1 Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin KSE802 0 Build or Request
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KSE800STSSTU Fairchild Semiconductor Corporation
1 Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin KSE800STSSTU 0 Build or Request
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KSE803S Fairchild Semiconductor Corporation
1 Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin KSE803S 0 Build or Request
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KSE801 Samsung Semiconductor
1 Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin KSE801 0 Build or Request
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KSE802STU Fairchild Semiconductor Corporation
1 Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin KSE802STU 0 Build or Request
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KSE803STU Fairchild Semiconductor Corporation
1 Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin KSE803STU 0 Build or Request
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KSE800 onsemi
1 Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin KSE800 0 Build or Request
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KSE800 Samsung Semiconductor
1 Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin KSE800 0 Build or Request
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KSE803 Samsung Semiconductor
1 Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin KSE803 0 Build or Request
Part Image Part Image 1 Complement to KSE700/701/702/703; High DC Current Gain: hFE = 750 (Min.) @ IC = 1.5 and 2.0 A DC; Monolithic Construction with Built-in Base-Emitter Resistors KSE800STU 1 Download Model
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