LET40 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 Shielded Gate MOSFET Technology; RoHS Compliant ; Max rDS(on) = 3.1 mΩ at VGS = 4.5 V, ID = 22 A ; 100% UIL Tested ; Termination is Lead-free ; Max rDS(on) = 2.1 mΩ at VGS = 10 V, ID = 27 A ; High Performance Technology for Extremely Low rDS(on) Other FDMC8360LET40 1 Download Model
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L-ET4028-50-DB Broadcom Limited
1 Micro Peripheral IC L-ET4028-50-DB 0 Build or Request
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L-ET4028-50-DB LSI Corporation
1 Micro Peripheral IC L-ET4028-50-DB 0 Build or Request
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LET4020S-03L-4.0-12-R Cre-sound Electronics
1 Sound transducer: electromagnetic alarm; 4kHz; 100mA; -40÷85°C LET4020S-03L-4.0-12-R 1 Download Model
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L-ET4048-50-DB LSI Corporation
1 Micro Peripheral IC L-ET4048-50-DB 0 Build or Request
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L-ET4048-50-DB Broadcom Limited
1 Micro Peripheral IC L-ET4048-50-DB 0 Build or Request
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L-ET4028-50-DB Avago Technologies
1 Micro Peripheral IC L-ET4028-50-DB 0 Build or Request
Part Image Part Image 1 Power Field-Effect Transistor, 300A I(D), 40V, 0.00085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA FDMS8350LET40 0 Build or Request
Part Image Part Image 1 Power Field-Effect Transistor, 103A I(D), 40V, 0.0026ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FDMD8240LET40 0 Build or Request
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L-ET4048-50-DB Avago Technologies
1 Micro Peripheral IC L-ET4048-50-DB 0 Build or Request
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FDMS8350LET40 Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor FDMS8350LET40 0 Build or Request
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FDMC8360LET40 Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor FDMC8360LET40 0 Build or Request
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FDMD8240LET40 Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor FDMD8240LET40 0 Build or Request
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