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LJ CK Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image
CK1046 Lorlin
1 CK ROTARY SWITCH Other CK1046 1 Download Model
Part Image Part Image 1 SL SMT HDR RA W/LATCH TIN 4 CK Other 74105-0003 1 Download Model
Part Image Part Image 1 High Power LEDs - Single Color LJ CRBP.01 Other LJ CRBP.01-JZLX-27-3A4A 1 Download Model
Part Image Part Image 1 Osram Opto LJ CKBP-JZKZ-25-1, OSLON Signal Series Red LED, 632 nm, 3030 (1212), Dome Lens SMD Package Other LJ CKBP-JZKZ-25-1 1 Download Model
Part Image Part Image
CK05BX103K Kyocera AVX
1 AVX CK 10nF Ceramic Multilayer Capacitor, 100 V dc, +125°C, X7R Dielectric, ±10%, Through Hole Other CK05BX103K 1 Download Model
Part Image Part Image
GRM1554C1H1R8BZ01D Murata Electronics
1 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 1.8pF 50volts CK +/-0.1pF Capacitor Chip Non-polarised GRM1554C1H1R8BZ01D 1 Download Model
Part Image Part Image
GRM1554C1HR50CZ01D Murata Electronics
1 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 0.5pF 50volts CK +/-0.25pF Capacitor Chip Non-polarised GRM1554C1HR50CZ01D 1 Download Model
Part Image Part Image 1 KK 100 HDR ASSY RA BKWY 15 CK TIN Header, Unshrouded - Right Angle PTH Pin 22-28-7150 1 Download Model
Part Image Part Image 0 LED,Osram OS,LJ CKBP-JYKY-36-1 Osram Opto LJ CKBP-JYKY-36-1, OSLON Signal Series Red LED, 632 nm 3030 (1212), Dome Lens SMD package Other LJ CKBP-JYKY-36-1 1 Download Model
Part Image Part Image 1 KK 100 HDR ASSY RA BKWY 11 CK TIN Header, Unshrouded - Right Angle PTH Pin 22-28-8110 1 Download Model
Part Image Part Image
GRM1884C2D2R0CV01D Murata Electronics
1 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 2.0pF 200volts CK +/-0.25pF Capacitor Chip Non-polarised GRM1884C2D2R0CV01D 1 Download Model
Part Image Part Image
GRM1554C1H2R0BZ01D Murata Electronics
1 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 2.0pF 50volts CK +/-0.1pF Capacitor Chip Non-polarised GRM1554C1H2R0BZ01D 1 Download Model
Part Image Part Image
GRM2194C2D1R0CY21D Murata Electronics
1 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 1.0pF 200volts CK +/-0.25pF Capacitor Chip Non-polarised GRM2194C2D1R0CY21D 1 Download Model
Part Image Part Image
GRM1884C1H1R5CA01D Murata Electronics
1 Murata 0603 GRM 1.5pF Ceramic Multilayer Capacitor, 50 V dc, +125°C, CK Dielectric, ±0.25pF Capacitor Chip Non-polarised GRM1884C1H1R5CA01D 1 Download Model
Part Image Part Image 1 Automotive Connectors POWERSTAC VHDR 10 CK 0 CKT BLK POL A TRAY Other 34695-0100 1 Download Model
Part Image Part Image 1 Headers & Wire Housings VERTICAL SL HDR 7 CK CKT M VOIDED 3 6, 0.100" (2.54mm) Other 71164-0022 1 Download Model
Part Image Part Image 1 AMS OSRAM GROUP - LJ CRBP.01-JZLX-27-3A4A-350-R18 - High Brightness LED, OSLON Signal, Red, 625 nm, 120 °, 130 lm, 1 A Other LJ CRBP.01-JZLX-27-3A4A-350-R18 1 Download Model
Part Image Part Image
GRM1884C1H1R0CA01D Murata Electronics
1 Murata 0603 GRM 1pF Ceramic Multilayer Capacitor, 50 V dc, +125°C, CK Dielectric, ±0.25pF Capacitor Chip Non-polarised GRM1884C1H1R0CA01D 1 Download Model
Part Image Part Image
GRM1884C1H2R0CA01D Murata Electronics
1 Murata 0603 GRM 2pF Ceramic Multilayer Capacitor, 50 V dc, +125°C, CK Dielectric, ±0.25pF Capacitor Chip Non-polarised GRM1884C1H2R0CA01D 1 Download Model
Part Image Part Image
UPD48576209F1-E24-DW1-A Renesas Electronics
1 The µPD48576209F1 is a 67, 108, 864-word by 9 bit, the µPD48576218F1 is a 33, 554, 432 word by 18 bit and the µPD48576236F1 is a 16, 777, 216 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell. The µPD48576209F1, µPD48576218F1 and µPD48576236F1 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (CK and CK#) are latched on the positive edge of CK and CK# BGA UPD48576209F1-E24-DW1-A 1 Download Model
Part Image Part Image 1 The H5TQ4G43AFR-xxC, H5TQ4G83AFR-xxC and H5TQ4G63AFR-xxC are a 4Gb CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. 4Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both ris BGA H5TQ4G63AFR-PBC 1 Download Model
Part Image Part Image
UPD48576236F1-E18-DW1-A Renesas Electronics
1 The µPD48576209F1 is a 67, 108, 864-word by 9 bit, the µPD48576218F1 is a 33, 554, 432 word by 18 bit and the µPD48576236F1 is a 16, 777, 216 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell. The µPD48576209F1, µPD48576218F1 and µPD48576236F1 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (CK and CK#) are latched on the positive edge of CK and CK# BGA UPD48576236F1-E18-DW1-A 1 Download Model
Part Image Part Image
UPD48576218F1-E24-DW1-A Renesas Electronics
1 The µPD48576209F1 is a 67, 108, 864-word by 9 bit, the µPD48576218F1 is a 33, 554, 432 word by 18 bit and the µPD48576236F1 is a 16, 777, 216 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell. The µPD48576209F1, µPD48576218F1 and µPD48576236F1 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (CK and CK#) are latched on the positive edge of CK and CK# BGA UPD48576218F1-E24-DW1-A 1 Download Model
Part Image Part Image
UPD48576236F1-E24-DW1-A Renesas Electronics
1 The µPD48576209F1 is a 67, 108, 864-word by 9 bit, the µPD48576218F1 is a 33, 554, 432 word by 18 bit and the µPD48576236F1 is a 16, 777, 216 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell. The µPD48576209F1, µPD48576218F1 and µPD48576236F1 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (CK and CK#) are latched on the positive edge of CK and CK# BGA UPD48576236F1-E24-DW1-A 1 Download Model
Part Image Part Image
UPD48576218F1-E18-DW1-A Renesas Electronics
1 The µPD48576209F1 is a 67, 108, 864-word by 9 bit, the µPD48576218F1 is a 33, 554, 432 word by 18 bit and the µPD48576236F1 is a 16, 777, 216 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell. The µPD48576209F1, µPD48576218F1 and µPD48576236F1 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (CK and CK#) are latched on the positive edge of CK and CK# BGA UPD48576218F1-E18-DW1-A 1 Download Model
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