MBRS2 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	MBRS260T3G onsemi	1	Compact Package with J–Bend Leads Ideal for Automated Handling; Highly Stable Oxide Passivated Junction; Guardring for Over–Voltage Protection; Low Forward Voltage Drop Mechanical Characteristics:; Case: Molded Epoxy; Epoxy Meets UL94, VO at 1/8 inch; Weight: 95 mg (approximately); Cathode Polarity Band; Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Available in 12 mm Tape, 2500 Units per 13 inch Reel, Add "T3" Suffix to Part Number; Finish: All External Surfaces C	Diodes Moulded	MBRS260T3G	3D model available Symbol and footprint available 3	1 Download Model
	MBRS230LT3G onsemi	1	Compact Package with J-Bend Leads Ideal for Automated Handling; Highly Stable Oxide Passivated Junction; Guardring for Over-Voltage Protection; Low Forward Voltage Drop Mechanical Characteristics:; Case: Molded Epoxy; Epoxy Meets UL94, VO at 1/8''; Weight: 95 mg (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Maximum Temperature of 2600C/10 Seconds for Soldering; Available in 12 mm Tape, 2500 Units per 13'' Reel, Add ''T3'' Suffix to Part Number;	Diodes Moulded	MBRS230LT3G	3D model available Symbol and footprint available 3	1 Download Model
	MBRS2545CT Taiwan Semiconductor	1	Diode: Schottky rectifying; SMD; 45V; 25A; D2PAK	Other	MBRS2545CT	3D model available Symbol and footprint available 3	1 Download Model
	MBRS240LT3G onsemi	1	Guardring for Over-Voltage Protection; Low Forward Voltage Drop; Highly Stable Oxide Passivated Junction; Case: Molded Epoxy; Compact Package with J-Bend Leads Ideal for Automated Handling; Maximum Temperature of 260°C/10 Seconds for Soldering; Epoxy Meets UL94, VO at 1/8"; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Cathode Polarity Band; Marking: 2BL4; Weight: 95 mg (approximately); Available in 12 mm Tape, 2500 Units per 13" Reel, Add "T3" Suffix to Part N	Diodes Moulded	MBRS240LT3G	3D model available Symbol and footprint available 3	1 Download Model

	MBRS2040LT3G onsemi	1	Compact Package with J-Bend Leads Ideal for Automated Handling; Epoxy Meets UL94, VO at 1/8"; Low Forward Voltage Drop Mechanical Characteristics:; Maximum Temperature of 260°C / 10 Seconds for Soldering; Highly Stable Oxide Passivated Junction; Cathode Polarity Band; Weight: 95 mg (approximately); Marking: BKJL; Case: Molded Epoxy; Available in 12 mm Tape, 2500 Units per 13 inch Reel, Add "T3" Suffix to Part Number; Guardring for Over-Voltage Protection; Finish: All External Surfaces Corrosion Resistant an	Diodes Moulded	MBRS2040LT3G	3D model available Symbol and footprint available 3	1 Download Model
	MBRS2H100T3G onsemi	1	Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 100V V(RRM), Silicon	Diodes Moulded	MBRS2H100T3G	3D model available Symbol and footprint available 3	1 Download Model
	MBRS2100 SUNMATE electronic Co., LTD	1	Surface mount Schottky barrier diode MBRS220 with 2.0A average rectified output current, 100V DC blocking voltage, 0.85V forward voltage at 2.0A, and operating junction temperature range from -65 to +125°C.		MBRS2100	3D model not available Symbol and footprint not available 0	0 Build or Request
	MBRS240 SUNMATE electronic Co., LTD	1	Surface mount Schottky barrier diode MBRS220 with 2.0A average rectified current, 100V peak repetitive reverse voltage, 0.85V forward voltage at 2.0A, and operating junction temperature from -65 to +125°C.		MBRS240	3D model not available Symbol and footprint not available 0	0 Build or Request
	MBRS220 SUNMATE electronic Co., LTD	1	Surface mount Schottky barrier diode MBRS220 with 2.0A average rectified current, 100V DC blocking voltage, 0.85V forward voltage at 2.0A, and operating junction temperature from -65 to +125°C.		MBRS220	3D model not available Symbol and footprint not available 0	0 Build or Request
	MBRS260 SUNMATE electronic Co., LTD	1	Surface mount Schottky barrier diode MBRS220 with 2.0A average rectified output current, 100V DC blocking voltage, 0.85V forward voltage at 2.0A, and operating junction temperature range from -65 to +125°C.		MBRS260	3D model not available Symbol and footprint not available 0	0 Build or Request
	MBRS20H150CTC00TRC Fagor Electrónica	1	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 150V V(RRM), Silicon, TO-263AB		MBRS20H150CTC00TRC	3D model not available Symbol and footprint not available 0	0 Build or Request
	MBRS20H100CTRNG Taiwan Semiconductor	1	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, TO-263AB		MBRS20H100CTRNG	3D model not available Symbol and footprint not available 0	0 Build or Request
	MBRS2050CTRN Taiwan Semiconductor	1	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 50V V(RRM), Silicon, TO-263AB		MBRS2050CTRN	3D model not available Symbol and footprint not available 0	0 Build or Request
	MBRS20H150CTRNG Taiwan Semiconductor	1	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 150V V(RRM), Silicon, TO-263AB		MBRS20H150CTRNG	3D model not available Symbol and footprint not available 0	0 Build or Request
	MBRS20100CT-Y Taiwan Semiconductor	1	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, TO-263AB		MBRS20100CT-Y	3D model not available Symbol and footprint not available 0	0 Build or Request

	MBRS20100CTHRNG Taiwan Semiconductor	1	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, TO-263AB		MBRS20100CTHRNG	3D model not available Symbol and footprint not available 0	0 Build or Request
	MBRS2045CT00TUC Fagor Electrónica	1	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 45V V(RRM), Silicon, TO-263AB		MBRS2045CT00TUC	3D model not available Symbol and footprint not available 0	0 Build or Request
	MBRS25150CTG Taiwan Semiconductor	1	Rectifier Diode, Schottky, 1 Phase, 2 Element, 12.5A, 150V V(RRM), Silicon		MBRS25150CTG	3D model not available Symbol and footprint not available 0	0 Build or Request
	MBRS2060CTHRN Taiwan Semiconductor	1	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 60V V(RRM), Silicon, TO-263AB		MBRS2060CTHRN	3D model not available Symbol and footprint not available 0	0 Build or Request
	MBRS2060CTRNG Taiwan Semiconductor	1	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 60V V(RRM), Silicon, TO-263AB		MBRS2060CTRNG	3D model not available Symbol and footprint not available 0	0 Build or Request
	MBRS20200CT-YRNG Taiwan Semiconductor	1	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon, TO-263AB		MBRS20200CT-YRNG	3D model not available Symbol and footprint not available 0	0 Build or Request
	MBRS20H200CTH Taiwan Semiconductor	1	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon, TO-263AB		MBRS20H200CTH	3D model not available Symbol and footprint not available 0	0 Build or Request
	MBRS2550CTC0G Taiwan Semiconductor	1	Rectifier Diode, Schottky, 1 Phase, 2 Element, 12.5A, 50V V(RRM), Silicon, TO-263AB		MBRS2550CTC0G	3D model not available Symbol and footprint not available 0	0 Build or Request
	MBRS25150CT Taiwan Semiconductor	1	Rectifier Diode, Schottky, 1 Phase, 2 Element, 12.5A, 150V V(RRM), Silicon		MBRS25150CT	3D model not available Symbol and footprint not available 0	0 Build or Request
	MBRS20H100CTHRNG Taiwan Semiconductor	1	Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, TO-263AB		MBRS20H100CTHRNG	3D model not available Symbol and footprint not available 0	0 Build or Request
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