MIW75 Model Download Search Results
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MIW75N65AS2Y-BP
MCC
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1 | IGBT Discrete | Transistor Outline, Vertical | MIW75N65AS2Y-BP |
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MIW75N65F-BP
MCC
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1 | IGBT Trench Field Stop 650 V 75 A 395 W Through Hole TO-247-3 | Transistor Outline, Vertical | MIW75N65F-BP |
3
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MIW75N65AH2Y-BP
MCC
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1 | Trench and Field Stop IGBT 650V 75A ,TO-247AB ,VCE :650 v ,IC :80A ,PD :428 /214 w ,TC=100℃ . | Other | MIW75N65AH2Y-BP |
3
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MIW75N65F-BP-L01
MCC
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1 | • High Speed Smooth Switching Device for Hard and Soft Switching• Vce(sat) with Positive Temperature Coefficient• High Ruggedness, Good Thermal Stability• Very Tight Parameter Distribution• Halogen Free. “Green” Device (Note 1)• Epoxy Meets UL 94 V-0 Flammability Rating• Lead Free Finish/RoHS Compliant (Note 2)("P" Suffix DesignatesRoHS Compliant. See Ordering Information) | Transistor Outline, Vertical | MIW75N65F-BP-L01 |
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MIW75N65AT0Y-BP
MCC
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1 | High speed smooth switching device for hard & soft switching• Positive Temperature Coefficient• Maximum junction temperature 175℃• High ruggedness, temperature stable• High short circuit capability(5us)• Halogen Free. “Green” Device (Note 1)• Epoxy Meets UL 94 V-0 Flammability Rating• Lead Free Finish/RoHS Compliant (Note 2)("P" Suffix DesignatesRoHS Compliant. See Ordering Information) | Transistor Outline, Vertical | MIW75N65AT0Y-BP |
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MIW75N65F
MCC
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0 | IGBT Discrete | MIW75N65F |
1
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