NCE3401 Model Download Search Results
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NCE3401
NCEPOWER
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1 | NCE3401 is a -30V, -4.2A channel enhancement mode power MOSFET with 48mΩ typical RDS(ON) at VGS=-10V, suitable for load switch and PWM applications in surface mount SOT-23 package. | NCE3401 |
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NCE3401
Wuxi NCE Power Semiconductor
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1 | MOSFET P Trench 30V 4.2A 1.3V @ 250uA 55 mΩ @ 4.2A,10V SOT-23(SOT-23-3) RoHS | SOT23 (3-Pin) | NCE3401 |
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NCE3401BY
NCEPOWER
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1 | P-Channel Enhancement Mode Power MOSFET NCE3401BY with -30V Drain-Source Voltage, -4.4A continuous drain current, and low on-resistance of 70mΩ at VGS=-2.5V, suitable for load switch and PWM applications in SOT-23-3L surface mount package. | NCE3401BY |
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NCE3401Y
NCEPOWER
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1 | P-Channel Enhancement Mode Power MOSFET NCE3401Y with -30V drain-source voltage, -4.2A continuous drain current, and low RDS(ON) down to 55mΩ at VGS=-10V, suitable for load switch and PWM applications in SOT-23-3L package. | NCE3401Y |
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NCE3401E
NCEPOWER
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1 | NCE3401E is a -30V, -4.4A channel enhancement mode power MOSFET with low RDS(ON) of less than 85mΩ at VGS=-2.5V, suitable for load switch and PWM applications in surface mount package. | NCE3401E |
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NCE3401A
NCEPOWER
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1 | P-Channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -4.4A continuous drain current, and low on-resistance of less than 85mΩ at -2.5V gate-source voltage, suitable for load switch and PWM applications in SOT-23 package. | NCE3401A |
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NCE3401AY
NCEPOWER
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1 | P-Channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -4.4A continuous drain current, and low on-resistance of less than 120mΩ at -2.5V gate-source voltage, suitable for load switch and PWM applications. | NCE3401AY |
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![Part Image](["https://componentsearchengine.com/2D/0T/4054935.1.1.png",null,null])
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