NGFP1 Model Download Search Results
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NGFP15T65M3DFPQ
Nexperia
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1 | 650 V, 50 A trench field-stop IGBT with full rated silicon diode | Transistor Outline, Vertical | NGFP15T65M3DFPQ |
3
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R5F523E6NGFP#10
Renesas Electronics
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1 | The RX23E-B Group of microcontrollers has a built-in analog front end (AFE) that is ideal for industrial sensor equipment. Compared to the RX23E-A, the high-speed performance and noise performance of the RX23E-B 24-bit delta-sigma A/D converter have been improved. The maximum data rate is 125kSPS, which is fast for a delta-sigma A/D converter and is eight times faster than the RX23E-A. RMS noise has been reduced to about 1/3 of that of the RX23E-A, making it possible to measure strain, temperature, pressure | Quad Flat Packages | R5F523E6NGFP#10 |
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R5F523E5NGFP#10
Renesas Electronics
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1 | The RX23E-B Group of microcontrollers has a built-in analog front end (AFE) that is ideal for industrial sensor equipment. Compared to the RX23E-A, the high-speed performance and noise performance of the RX23E-B 24-bit delta-sigma A/D converter have been improved. The maximum data rate is 125kSPS, which is fast for a delta-sigma A/D converter and is eight times faster than the RX23E-A. RMS noise has been reduced to about 1/3 of that of the RX23E-A, making it possible to measure strain, temperature, pressure | Quad Flat Packages | R5F523E5NGFP#10 |
3
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NGFP15T65M3DFP
Nexperia
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1 | Insulated Gate Bipolar Transistor | NGFP15T65M3DFP |
0
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934669562127
Nexperia
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1 | Insulated Gate Bipolar Transistor | 934669562127 |
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![Part Image](["https://componentsearchengine.com/2D/0T/18887395.2.1.png",null,null])
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