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NTB190N65S3HF
onsemi
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1 | 700 V @ TJ = 150 °C; Ultra Low Gate Charge (Typ. Qg = 35 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 464 pF); Excellent body diode performance (low Qrr, robust body diode); Optimized Capacitance; RoHS Compliant; 100% Avalanche Tested; Typ. RDS(on) = 161 mΩ | Other | NTB190N65S3HF |
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