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RBE-0505S
RECOM Power
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1 | Recom 1W Isolated DC-DC Converter, Vin 4.5 → 5.5 V dc, Vout 5V dc, I/O isolation 1000V dc | Other | RBE-0505S |
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RBE-014-UBCS-R
RECOM Power
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1 | Flyback Converters For For DC/DC Converters SMPS Transformer 1500VDC Isolation 330kHz Surface Mount | Other | RBE-014-UBCS-R |
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RBE-023-WB5S-R
RECOM Power
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1 | Flyback Converters For For DC/DC Converters SMPS Transformer 1500VDC Isolation 330kHz Surface Mount , 18 ~ 36V , -40°C ~ 125°C | Other | RBE-023-WB5S-R |
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RBE-030-UBAS-R
RECOM Power
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1 | Power Transformers PWR / Flyback / 6.9H ,16.5mm × 15.5mm × 7.2mm,1500 vdc | Other | RBE-030-UBAS-R |
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RBE-017-UBAS-R
RECOM Power
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1 | Flyback Converters For For DC/DC Converters SMPS Transformer 300VDC Isolation 330kHz Surface Mount | Other | RBE-017-UBAS-R |
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RBE-024-WBBS-R
RECOM Power
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1 | Flyback Converters For For DC/DC Converters SMPS Transformer 1500VDC Isolation 330kHz Surface Mount | Other | RBE-024-WBBS-R |
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RBE-025-UB5S-R
RECOM Power
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1 | Flyback Isolation Transformer, SMD Surface Mount Installation, Voltage: 1500VDC, -40~125°C, 6.86µH, 1mA | Other | RBE-025-UB5S-R |
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RBE-011-UB5S-R
RECOM Power
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1 | Flyback Converters For For DC/DC Converters SMPS Transformer 1500VDC Isolation 330kHz Surface Mount | Other | RBE-011-UB5S-R |
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RBE012N10R1SZPW#KB0
Renesas Electronics
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1 | 100V, 350A, 1.2mΩ, REXFET-1 N-Channel Power MOSFET in TOLT | Small Outline Packages | RBE012N10R1SZPW#KB0 |
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RBE037N10R1SZN6#HB0
Renesas Electronics
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1 | REXFET-1 N-Channel Power MOSFET150 V - 200 A - 3.4 mΩ - TOLL The SO8-FL package features ultra-compact, leadless designs with Wettable Flanks to support enhanced thermal performance, reliability, and ease of assembly.Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications. | Other | RBE037N10R1SZN6#HB0 |
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RBE058N04R0SZN6#HB0
Renesas Electronics
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1 | The ANL4 40V technology offers low on-state resistance. It reduces capacitance and gate charge for more efficient switching. This technology enables the device to achieve high switching speed and low power loss, thereby improving energy efficiency. Furthermore, it enhances durability and reliability, making it suitable for industrial applications such as motor control and battery management system. | Other | RBE058N04R0SZN6#HB0 |
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RBE015N10R1SZPV#GB0
Renesas Electronics
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1 | REXFET-1 N-Channel Power MOSFET100 V - 340 A - 1.5 mΩ - TOLG | Other | RBE015N10R1SZPV#GB0 |
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RBE039N15R1SZPW#KB0
Renesas Electronics
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1 | The RBE039N15R1SZPW N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a TOLT package. The TOLT package features top-side cooling for ultra-compact and optimal thermal performance.Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications. | Other | RBE039N15R1SZPW#KB0 |
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RBE024N08R1SZN6#HB0
Renesas Electronics
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1 | REXFET-1 N-Channel Power MOSFET80 V - 175 A - 2.4 mΩ - SO8-FL(5×6 | Other | RBE024N08R1SZN6#HB0 |
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RBE013N08R1SZQ4#GB0
Renesas Electronics
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1 | 80V, 340A, 1.3mΩ, REXFET-1 N-Channel Power MOSFET in TOLL | Other | RBE013N08R1SZQ4#GB0 |
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RBE023N04R0SZN6#HB0
Renesas Electronics
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1 | The ANL4 40V technology offers low on-state resistance. It reduces capacitance and gate charge for more efficient switching. This technology enables the device to achieve high switching speed and low power loss, thereby improving energy efficiency. Furthermore, it enhances durability and reliability, making it suitable for industrial applications such as motor control and battery management system. | Other | RBE023N04R0SZN6#HB0 |
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RBE039N15R1SZQ4#GB0
Renesas Electronics
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1 | REXFET-1 N-Channel Power MOSFET150 V - 190 A - 3.9 mΩ - TOLL | Other | RBE039N15R1SZQ4#GB0 |
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RBE030N04R0SZN6#HB0
Renesas Electronics
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1 | The ANL4 40V technology offers low on-state resistance. It reduces capacitance and gate charge for more efficient switching. This technology enables the device to achieve high switching speed and low power loss, thereby improving energy efficiency. Furthermore, it enhances durability and reliability, making it suitable for industrial applications such as motor control and battery management system. | Other | RBE030N04R0SZN6#HB0 |
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RBE067N10R1SZN6#HB0
Renesas Electronics
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1 | REXFET-1 N-Channel Power MOSFET100 V - 80 A - 6.7 mΩ - SO8-FL(5×6) | Other | RBE067N10R1SZN6#HB0 |
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RBE020N04R0SZN6#HB0
Renesas Electronics
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1 | The ANL4 40V technology offers low on-state resistance. It reduces capacitance and gate charge for more efficient switching. This technology enables the device to achieve high switching speed and low power loss, thereby improving energy efficiency. Furthermore, it enhances durability and reliability, making it suitable for industrial applications such as motor control and battery management system. | Other | RBE020N04R0SZN6#HB0 |
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RBE05AS20AT2R
ROHM Semiconductor
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1 | ROHM 30V 500mA, Diode, 2-Pin DFN1006 RBE05AS20AT2R | Other | RBE05AS20AT2R |
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RBE019N10R1SZQ4#GB0
Renesas Electronics
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1 | The RBE019N10R1SZQ4 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a TOLL package. The TOLL package features ultra-compact, leadless designs with Wettable Flanks for enhanced thermal performance, reliability, and ease of assembly.Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications. | Other | RBE019N10R1SZQ4#GB0 |
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RBE035N04R0SZN6#HB0
Renesas Electronics
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1 | The ANL4 40V technology offers low on-state resistance. It reduces capacitance and gate charge for more efficient switching. This technology enables the device to achieve high switching speed and low power loss, thereby improving energy efficiency. Furthermore, it enhances durability and reliability, making it suitable for industrial applications such as motor control and battery management system. | Other | RBE035N04R0SZN6#HB0 |
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RBE050N04R0SZN6#HB0
Renesas Electronics
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1 | The ANL4 40V technology offers low on-state resistance. It reduces capacitance and gate charge for more efficient switching. This technology enables the device to achieve high switching speed and low power loss, thereby improving energy efficiency. Furthermore, it enhances durability and reliability, making it suitable for industrial applications such as motor control and battery management system. | Other | RBE050N04R0SZN6#HB0 |
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RBE034N15R1SZQ4#GB0
Renesas Electronics
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1 | REXFET-1 N-Channel Power MOSFET150 V - 200 A - 3.4 mΩ - TOLL | Other | RBE034N15R1SZQ4#GB0 |
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