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Image Part Number D.S Description Package Category Prices / Stock Model Action
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RBE-0505S RECOM Power
1 Recom 1W Isolated DC-DC Converter, Vin 4.5 → 5.5 V dc, Vout 5V dc, I/O isolation 1000V dc Other RBE-0505S 1 Download Model
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RBE-014-UBCS-R RECOM Power
1 Flyback Converters For For DC/DC Converters SMPS Transformer 1500VDC Isolation 330kHz Surface Mount Other RBE-014-UBCS-R 1 Download Model
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RBE-023-WB5S-R RECOM Power
1 Flyback Converters For For DC/DC Converters SMPS Transformer 1500VDC Isolation 330kHz Surface Mount , 18 ~ 36V , -40°C ~ 125°C Other RBE-023-WB5S-R 1 Download Model
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RBE-030-UBAS-R RECOM Power
This part was updated within the past 30 days.
Set alerts for model updates on the part download page.
1 Power Transformers PWR / Flyback / 6.9H ,16.5mm × 15.5mm × 7.2mm,1500 vdc Other RBE-030-UBAS-R 1 Download Model
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RBE-017-UBAS-R RECOM Power
1 Flyback Converters For For DC/DC Converters SMPS Transformer 300VDC Isolation 330kHz Surface Mount Other RBE-017-UBAS-R 1 Download Model
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RBE-024-WBBS-R RECOM Power
1 Flyback Converters For For DC/DC Converters SMPS Transformer 1500VDC Isolation 330kHz Surface Mount Other RBE-024-WBBS-R 1 Download Model
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RBE-025-UB5S-R RECOM Power
1 Flyback Isolation Transformer, SMD Surface Mount Installation, Voltage: 1500VDC, -40~125°C, 6.86µH, 1mA Other RBE-025-UB5S-R 1 Download Model
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RBE-011-UB5S-R RECOM Power
1 Flyback Converters For For DC/DC Converters SMPS Transformer 1500VDC Isolation 330kHz Surface Mount Other RBE-011-UB5S-R 1 Download Model
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RBE012N10R1SZPW#KB0 Renesas Electronics
This part was updated within the past 30 days.
Set alerts for model updates on the part download page.
1 100V, 350A, 1.2mΩ, REXFET-1 N-Channel Power MOSFET in TOLT Small Outline Packages RBE012N10R1SZPW#KB0 1 Download Model
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RBE037N10R1SZN6#HB0 Renesas Electronics
1 REXFET-1 N-Channel Power MOSFET150 V - 200 A - 3.4 mΩ - TOLL The SO8-FL package features ultra-compact, leadless designs with Wettable Flanks to support enhanced thermal performance, reliability, and ease of assembly.Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications. Other RBE037N10R1SZN6#HB0 1 Download Model
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RBE058N04R0SZN6#HB0 Renesas Electronics
1 The ANL4 40V technology offers low on-state resistance. It reduces capacitance and gate charge for more efficient switching. This technology enables the device to achieve high switching speed and low power loss, thereby improving energy efficiency. Furthermore, it enhances durability and reliability, making it suitable for industrial applications such as motor control and battery management system. Other RBE058N04R0SZN6#HB0 1 Download Model
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RBE015N10R1SZPV#GB0 Renesas Electronics
1 REXFET-1 N-Channel Power MOSFET100 V - 340 A - 1.5 mΩ - TOLG Other RBE015N10R1SZPV#GB0 1 Download Model
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RBE039N15R1SZPW#KB0 Renesas Electronics
1 The RBE039N15R1SZPW N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a TOLT package. The TOLT package features top-side cooling for ultra-compact and optimal thermal performance.Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications. Other RBE039N15R1SZPW#KB0 1 Download Model
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RBE024N08R1SZN6#HB0 Renesas Electronics
1 REXFET-1 N-Channel Power MOSFET80 V - 175 A - 2.4 mΩ - SO8-FL(5×6 Other RBE024N08R1SZN6#HB0 1 Download Model
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RBE013N08R1SZQ4#GB0 Renesas Electronics
1 80V, 340A, 1.3mΩ, REXFET-1 N-Channel Power MOSFET in TOLL Other RBE013N08R1SZQ4#GB0 1 Download Model
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RBE023N04R0SZN6#HB0 Renesas Electronics
1 The ANL4 40V technology offers low on-state resistance. It reduces capacitance and gate charge for more efficient switching. This technology enables the device to achieve high switching speed and low power loss, thereby improving energy efficiency. Furthermore, it enhances durability and reliability, making it suitable for industrial applications such as motor control and battery management system. Other RBE023N04R0SZN6#HB0 1 Download Model
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RBE039N15R1SZQ4#GB0 Renesas Electronics
1 REXFET-1 N-Channel Power MOSFET150 V - 190 A - 3.9 mΩ - TOLL Other RBE039N15R1SZQ4#GB0 1 Download Model
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RBE030N04R0SZN6#HB0 Renesas Electronics
1 The ANL4 40V technology offers low on-state resistance. It reduces capacitance and gate charge for more efficient switching. This technology enables the device to achieve high switching speed and low power loss, thereby improving energy efficiency. Furthermore, it enhances durability and reliability, making it suitable for industrial applications such as motor control and battery management system. Other RBE030N04R0SZN6#HB0 1 Download Model
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RBE067N10R1SZN6#HB0 Renesas Electronics
1 REXFET-1 N-Channel Power MOSFET100 V - 80 A - 6.7 mΩ - SO8-FL(5×6) Other RBE067N10R1SZN6#HB0 1 Download Model
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RBE020N04R0SZN6#HB0 Renesas Electronics
1 The ANL4 40V technology offers low on-state resistance. It reduces capacitance and gate charge for more efficient switching. This technology enables the device to achieve high switching speed and low power loss, thereby improving energy efficiency. Furthermore, it enhances durability and reliability, making it suitable for industrial applications such as motor control and battery management system. Other RBE020N04R0SZN6#HB0 1 Download Model
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RBE05AS20AT2R ROHM Semiconductor
1 ROHM 30V 500mA, Diode, 2-Pin DFN1006 RBE05AS20AT2R Other RBE05AS20AT2R 1 Download Model
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RBE019N10R1SZQ4#GB0 Renesas Electronics
1 The RBE019N10R1SZQ4 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a TOLL package. The TOLL package features ultra-compact, leadless designs with Wettable Flanks for enhanced thermal performance, reliability, and ease of assembly.Renesas' REXFET-1 split-gate technology is well-suited for applications that require low RDS(on) and switching capability, making it ideal for high-power and high-frequency applications. Other RBE019N10R1SZQ4#GB0 1 Download Model
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RBE035N04R0SZN6#HB0 Renesas Electronics
1 The ANL4 40V technology offers low on-state resistance. It reduces capacitance and gate charge for more efficient switching. This technology enables the device to achieve high switching speed and low power loss, thereby improving energy efficiency. Furthermore, it enhances durability and reliability, making it suitable for industrial applications such as motor control and battery management system. Other RBE035N04R0SZN6#HB0 1 Download Model
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RBE050N04R0SZN6#HB0 Renesas Electronics
1 The ANL4 40V technology offers low on-state resistance. It reduces capacitance and gate charge for more efficient switching. This technology enables the device to achieve high switching speed and low power loss, thereby improving energy efficiency. Furthermore, it enhances durability and reliability, making it suitable for industrial applications such as motor control and battery management system. Other RBE050N04R0SZN6#HB0 1 Download Model
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RBE034N15R1SZQ4#GB0 Renesas Electronics
1 REXFET-1 N-Channel Power MOSFET150 V - 200 A - 3.4 mΩ - TOLL Other RBE034N15R1SZQ4#GB0 1 Download Model
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