RJF06 Model Download Search Results
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RJF0610JSP-00#J0
Renesas Electronics
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1 | This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. . | Small Outline Packages | RJF0610JSP-00#J0 |
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RJF0610DSP-00#J0
Renesas Electronics
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1 | This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. . | Small Outline Packages | RJF0610DSP-00#J0 |
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RJF0624JSP-00#J0
Renesas Electronics
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1 | Logic level operation. Built-in the over temperature shut-down circuit and current limitation circuit. High endurance capability against to the short circuit. Temperature hysteresis type. High density mounting Power supply voltage applies 12 V and 24 V. AEC-Q101VerD Compliant Use RJF0622JSP Chip | Small Outline Packages | RJF0624JSP-00#J0 |
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RJF0608JSP
Renesas Electronics
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1 | This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-inover temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case ofhigh junction temperature like applying over power consumption, over current etc.. | Small Outline Packages | RJF0608JSP |
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RJF0614JSP-00#J0
Renesas Electronics
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1 | The RJF0614JSP is an N channel MOSFET for body lighting heater, power train, and 24V applications. It has built-in overheat protection functions and can function as a thermal FET. | Small Outline Packages | RJF0614JSP-00#J0 |
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RJF0614DSP-00#J0
Renesas Electronics
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1 | • Logic level operation (5 to 6 V Gate drive).• Built-in the over temperature shut-down circuit.• High endurance capability against to the short circuit.• Temperature hysteresis type.• High density mounting• Power supply voltage applies 12 V and 24 V. | Small Outline Packages | RJF0614DSP-00#J0 |
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RJF0612JPE-00#J3
Renesas Electronics
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0 | This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. . | Other | RJF0612JPE-00#J3 |
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RJF0606JPE-00#J3
Renesas Electronics
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0 | This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. . | Other | RJF0606JPE-00#J3 |
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RJF0611JPE-00#J3
Renesas Electronics
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0 | This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. . | Other | RJF0611JPE-00#J3 |
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RJF0606JPE-01#J3
Renesas Electronics
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1 | This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. . | Other | RJF0606JPE-01#J3 |
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RJF0605JPD-00#J3
Renesas Electronics
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0 | This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. . | Other | RJF0605JPD-00#J3 |
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RJF0622JSP-00#J0
Renesas Electronics
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1 | This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. . | Small Outline Packages | RJF0622JSP-00#J0 |
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RJF0613JSP-00#J0
Renesas Electronics
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1 | This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. . | Small Outline Packages | RJF0613JSP-00#J0 |
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RJF0605JPD-01#J3
Renesas Electronics
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1 | This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. . | Other | RJF0605JPD-01#J3 |
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RJF0608JSP-00#J0
Renesas Electronics
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1 | This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-inover temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case ofhigh junction temperature like applying over power consumption, over current etc.. | Small Outline Packages | RJF0608JSP-00#J0 |
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RJF0611JPD-00#J3
Renesas Electronics
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0 | This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. . | Other | RJF0611JPD-00#J3 |
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RJF0609JSP-00#J0
Renesas Electronics
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1 | This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. . | Small Outline Packages | RJF0609JSP-00#J0 |
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RJF0612JPE-01#J3
Renesas Electronics
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1 | This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. . | Other | RJF0612JPE-01#J3 |
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RJF0608JSP-00-J0
Renesas Electronics Corporation
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1 | POWER, FET | RJF0608JSP-00-J0 |
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RJF0612DPE-00-J3
Renesas Electronics Corporation
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1 | POWER, FET | RJF0612DPE-00-J3 |
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RJF0622JSP-00-J0
Renesas Electronics Corporation
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1 | Power Field-Effect Transistor | RJF0622JSP-00-J0 |
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RJF0618JPE-00-J3
Renesas Electronics Corporation
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1 | POWER, FET | RJF0618JPE-00-J3 |
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RJF0628JNS-00-Q7
Renesas Electronics Corporation
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1 | Power Field-Effect Transistor | RJF0628JNS-00-Q7 |
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RJF0612JPE-00-J3
Renesas Electronics Corporation
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1 | POWER, FET | RJF0612JPE-00-J3 |
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RJF0611DPD-00-J3
Renesas Electronics Corporation
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1 | Power Field-Effect Transistor, 30A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | RJF0611DPD-00-J3 |
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