SI796 Model Download Search Results
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SI7964DP-T1-GE3
Vishay Intertechnologies
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1 | Power Field-Effect Transistor, 6.1A I(D), 60V, 0.023ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | SI7964DP-T1-GE3 |
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SI7964DP-T1-E3
Vishay Intertechnologies
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1 | Power Field-Effect Transistor, 6.1A I(D), 60V, 0.023ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | SI7964DP-T1-E3 |
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SI7964DP-T1-GE3
Vishay Siliconix
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1 | Power Field-Effect Transistor, 6.1A I(D), 60V, 0.023ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | SI7964DP-T1-GE3 |
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SI7964DP-T1-E3
Vishay Siliconix
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1 | Power Field-Effect Transistor, 6.1A I(D), 60V, 0.023ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | SI7964DP-T1-E3 |
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932BSI7960.25%10
Vishay Intertechnologies
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1 | Fixed Resistor, Wire Wound, 8W, 796ohm, 500V, 0.25% +/-Tol, 10ppm/Cel, Through Hole Mount | 932BSI7960.25%10 |
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516BSI7960.5%25
Vishay Intertechnologies
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1 | Fixed Resistor, Wire Wound, 4W, 796ohm, 200V, 0.5% +/-Tol, 25ppm/Cel, Through Hole Mount | 516BSI7960.5%25 |
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947BSI7960.25%100
Vishay Intertechnologies
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1 | Fixed Resistor, Wire Wound, 10W, 796ohm, 750V, 0.25% +/-Tol, 100ppm/Cel, Through Hole Mount | 947BSI7960.25%100 |
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63BSI79.60.25%100
Vishay Intertechnologies
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1 | Fixed Resistor, Wire Wound, 2W, 79.6ohm, 100V, 0.25% +/-Tol, 100ppm/Cel, Through Hole Mount | 63BSI79.60.25%100 |
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947BSI7.96K0.5%10
Vishay Intertechnologies
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1 | Fixed Resistor, Wire Wound, 10W, 7960ohm, 750V, 0.5% +/-Tol, -10,10ppm/Cel, | 947BSI7.96K0.5%10 |
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