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VI-JW0-CY
VICOR
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1 | Isolated DC/DC Converters 50W VI 24 Vin 5Vout C Grade | Other | VI-JW0-CY |
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STB120N4LF6
STMicroelectronics
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1 | N-channel 40 V, 3.1 mΩ, 80 A DPAK, D²PAK STripFET™ VI DeepGATE™ Power MOSFET | Other | STB120N4LF6 |
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1-1393641-1
TE Connectivity
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1 | Eurocard Connectors, Receptacle, Board-to-Board, 32 Position, .1 in [2.54 mm] Centerline, Printed Circuit Board, 2 Row, Vertical, Eurocard Type Bn | Other | 1-1393641-1 |
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MI-J20-IZ
VICOR
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1 | Isolated DC/DC Converters 25W VI 28 Vin 5Vout I Grade | Other | MI-J20-IZ |
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MI-J23-IY
VICOR
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1 | Isolated DC/DC Converters VI J00/200-28 Vin, 24 Vout, 50 W, | Other | MI-J23-IY |
3
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QPI-11LZ-01
VICOR
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1 | Power Line Filters 24V 7A VI CHIP FLTR OPEN FRAME VERS | Other | QPI-11LZ-01 |
3
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STP80N6F6
STMicroelectronics
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1 | Automotive-grade N-channel 60 V, 4.4 mOhm typ., 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a TO-220 package | Transistor Outline, Vertical | STP80N6F6 |
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QPI-11LZ
VICOR
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1 | Power Line Filters 50V 7A VI CHIP FLTR | Other | QPI-11LZ |
3
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SSM6J505NU,LF
Toshiba
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1 | MOSFET P-Ch U-MOS VI FET ID -12A -12V 1200pF | Other | SSM6J505NU,LF |
3
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STD96N3LLH6
STMicroelectronics
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1 | N-channel 30 V, 0.0037 Ohm typ., 80 A, in DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET | Other | STD96N3LLH6 |
2
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STD150N3LLH6
STMicroelectronics
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1 | STMICROELECTRONICS - STD150N3LLH6 - N CHANNEL MOSFET, STripFET VI DeepGATE, 30V, 80A, DPAK | Other | STD150N3LLH6 |
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STL30P3LLH6
STMicroelectronics
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1 | P-channel 30 V, 0.024 Ohm typ., 30 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a PowerFLAT(TM) 5x6 package | Other | STL30P3LLH6 |
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MP2723AGQC-0000-P
Monolithic Power Systems (MPS)
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1 | The MP2723A is a 3A, highly integrated, switchmode battery charge management device for single-cell Li-ion or Li-polymer batteries. This device works with narrow-voltage DC (NVDC) system power path management, and is suitable for a variety of applications, such as smartphones, tablets, wireless cameras, and other portable devices. Its low-impedance power path optimizes efficiency, reduces battery charging time, and extends battery life. The I2C serial interface allows the device to be flexibly controlled vi | Other | MP2723AGQC-0000-P |
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STL13DP10F6
STMicroelectronics
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1 | Dual P-channel 100 V, 0.136 Ω typ., 3.3 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 5x6 double island | Other | STL13DP10F6 |
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STH310N10F7-2
STMicroelectronics
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1 | MOSFET N-CH 100V 2.1mOhm 180A STripFET VI | Other | STH310N10F7-2 |
2
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SSM6N55NU,LF
Toshiba
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1 | MOSFET 2N-Ch U-MOS VI FET ID 4A 30VDSS 4.5GD | Other | SSM6N55NU,LF |
3
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SSM6N57NU,LF
Toshiba
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1 | MOSFET 2N-Ch U-MOS VI FET ID 4A 30VDSS | Other | SSM6N57NU,LF |
3
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STD44N4LF6
STMicroelectronics
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1 | MOSFET N-Ch 40V 8.9 mOhm 44A STripFET VI Deep | Other | STD44N4LF6 |
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STD155N3LH6
STMicroelectronics
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1 | N-channel 30 V, 0.0024 Ohm, 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in DPAK package | Other | STD155N3LH6 |
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STS3P6F6
STMicroelectronics
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1 | Power MOSFET P ch StripFET VI 60V 3A,SO8 STMicroelectronics STS3P6F6 P-channel MOSFET Transistor, 3 A, 60 V, 8-Pin SOIC | Small Outline Packages | STS3P6F6 |
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PD638C
Everlight
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1 | PD638C is a high speed and sensitive PIN photodiode in a flat sidenview plastic package. Due to its water clear epoxy the device is sensitivento visible and infrared radiation.PIN Photodiode Water-clear 150µA Side Vi | Other | PD638C |
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726TLFT
Renesas Electronics
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1 | Used in conjunction with an external pullable quartz crystal, this monolithic integrated circuit replaces more costly hybrid (canned) VCXO devices. The IDT726 is designed primarily for data and clock recovery applications such as ADSL modems, set-top box receivers, and telecom systems. The frequency of the on-chip VCXO is adjusted by an external control voltage to the VIN pin. Since VIN is a high impedance input, it can be driven directly from an PWM RC integrator circuit. Frequency output increases with VI | SOT23 (6-Pin) | 726TLFT |
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TK190A65Z,S4X
Toshiba
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1 | MOSFET DTMOS VI TO-220SIS PD=40W F=1MHZ | Transistor Outline, Vertical | TK190A65Z,S4X |
3
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STL11N3LLH6
STMicroelectronics
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1 | MOSFET N-Ch 30V 0.006 Ohm 11A STripFET VI Deep | Other | STL11N3LLH6 |
3
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SSM6J414TU,LF
Toshiba
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1 | MOSFET P-Ch U-MOS VI FET ID -6A -20V 1650pF | SO Transistor Flat Lead | SSM6J414TU,LF |
3
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![Part Image](["https://componentsearchengine.com/Thumbnails/1/VI-JW0-CY.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Thumbnails/9/STB120N4LF6.jpg",null,"//content.supplyframe.com/images/process/fit-in/100x100/p/d2pak_4.jpg"])
![Part Image](["https://componentsearchengine.com/Thumbnails/9/1-1393641-1.JPG",null,null])
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![Part Image](["https://componentsearchengine.com/Thumbnails/1/MI-J23-IY.jpg",null,"//content.supplyframe.com/images/process/fit-in/100x100/p/2515_module_9.jpg"])
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![Part Image](["https://componentsearchengine.com/Thumbnails/9/STD155N3LH6.jpg",null,"//content.supplyframe.com/images/process/fit-in/100x100/p/d2pak_4.jpg"])
![Part Image](["https://componentsearchengine.com/Thumbnails/9/STS3P6F6.jpg",null,null])
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