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1N4749A - Taiwan Semiconductor

Description: TAIWAN SEMICONDUCTOR - 1N4749A - ZENER DIODE, 1W, 24V, DO-204AL

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PCB Footprints
1N4749A - Taiwan Semiconductor PCB footprint - Diodes, Axial Diameter Horizontal Mounting - Diodes, Axial Diameter Horizontal Mounting - DO-204AL (DO-41)
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1N4749A - Taiwan Semiconductor  - 3D model - Diodes, Axial Diameter Horizontal Mounting - DO-204AL (DO-41)
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1N4749A Details

  • Manufacturer Part Number:

    1N4749A

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Taiwan Semiconductor

  • YTEOL:

    5.85

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    ZENER DIODE

  • Dynamic Impedance-Max:

    25 Ω

  • JEDEC-95 Code:

    DO-41

  • JESD-30 Code:

    O-PALF-W2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    LONG FORM

  • Peak Reflow Temperature (Cel):

    260

  • Polarity:

    UNIDIRECTIONAL

  • Power Dissipation-Max:

    1 W

  • Qualification Status:

    Not Qualified

  • Reference Voltage-Nom:

    24 V

  • Surface Mount:

    NO

  • Technology:

    ZENER

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    WIRE

  • Terminal Position:

    AXIAL

  • Voltage Tol-Max:

    5%

  • Working Test Current:

    10.5 mA

1N4749A Frequently Asked Questions (FAQs)

  • The recommended footprint and land pattern for the 1N4749A can be found in the Taiwan Semiconductor's packaging information document or in IPC-7351 standard. A typical footprint for the DO-41 package is a rectangular pad with a size of 1.5mm x 2.5mm and a thermal pad with a size of 2.5mm x 2.5mm.
  • To ensure proper soldering, follow the recommended soldering profile and temperature guidelines. Use a solder with a melting point below 260°C and avoid applying excessive heat or force during soldering. Inspect the solder joints for defects such as cold joints, solder bridges, or insufficient solder.
  • The maximum allowable power dissipation for the 1N4749A depends on the ambient temperature, thermal resistance, and heat sinking. Use the thermal resistance values provided in the datasheet and calculate the maximum power dissipation using the formula: Pd = (Tj - Ta) / Rth. Ensure the calculated value is below the maximum rated power dissipation of 1W.
  • The 1N4749A is a commercial-grade device and may not meet the requirements for high-reliability or automotive applications. Check the device's AEC-Q101 qualification and PPAP (Production Part Approval Process) documentation to ensure it meets the specific requirements of your application.
  • Handle the 1N4749A with ESD-protective equipment and follow proper ESD handling procedures to prevent damage. Use an ESD wrist strap, mat, or workstation, and ensure the device is stored in an ESD-protective package when not in use.

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1N4749A Overview

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Part Image 1N4749AGTR Microsemi Corporation (now Microchip)

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Part Image 1N4749A-13 Diodes Incorporated

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Part Image 1N4749A Diodes Incorporated

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