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1N485B - Microsemi Corporation

Description: Rectifier Diode Switching 180V 0.2A 2-Pin DO-35 Bag

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1N485B - Microsemi Corporation - PCB symbol
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PCB Footprints
1N485B - Microsemi Corporation PCB footprint - Diodes, Axial Diameter Horizontal Mounting - Diodes, Axial Diameter Horizontal Mounting - 1N485B
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3D Models
1N485B - Microsemi Corporation - 3D model - Diodes, Axial Diameter Horizontal Mounting - 1N485B
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1N485B Details

  • Manufacturer Part Number:

    1N485B

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Transferred

  • Package Description:

    HERMETIC SEALED, GLASS PACKAGE-2

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.70

  • Manufacturer:

    Microsemi Corporation (now Microchip)

  • Additional Feature:

    METALLURGICALLY BONDED

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • JEDEC-95 Code:

    DO-35

  • JESD-30 Code:

    O-LALF-W2

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Output Current-Max:

    0.1 A

  • Package Body Material:

    GLASS

  • Package Shape:

    ROUND

  • Package Style:

    LONG FORM

  • Power Dissipation-Max:

    0.5 W

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    180 V

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    WIRE

  • Terminal Position:

    AXIAL

1N485B Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 1N485B is -65°C to 175°C, although it can withstand storage temperatures from -65°C to 200°C.
  • To ensure proper biasing, the 1N485B requires a minimum of 1.5V reverse bias voltage and a maximum of 6V forward bias voltage. Additionally, the device should be operated within the recommended current limits to prevent overheating.
  • The typical junction-to-case thermal resistance of the 1N485B is around 1.5°C/W, which means that for every watt of power dissipated, the junction temperature will rise by 1.5°C above the case temperature.
  • Yes, the 1N485B is a radiation-hardened device, making it suitable for use in high-reliability and aerospace applications. It meets the requirements of MIL-PRF-19500 and is qualified to NASA's EEE-INST-002 guidelines.
  • To ensure optimal reliability and longevity, handle the 1N485B by its body or pins, avoiding touching the glass or ceramic surfaces. Store the devices in a clean, dry environment, and avoid exposing them to mechanical stress or extreme temperatures.

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1N485B Alternates

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Part Image 1N485BE3 Microchip Technology Inc

Rectifier Diode, 1 Phase, 1 Element, 0.1A, Silicon, DO-35