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1N5665A - Microsemi Corporation

Description: TVS Diode Single Uni-Dir 171V 1.5KW 2-Pin DO-13 Bag

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Symbol
1N5665A - Microsemi Corporation - PCB symbol
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PCB Footprints
1N5665A - Microsemi Corporation PCB footprint - Diodes, Axial Diameter Horizontal Mounting - Diodes, Axial Diameter Horizontal Mounting - DO-13 (DO-202AA)
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3D Models
1N5665A - Microsemi Corporation - 3D model - Diodes, Axial Diameter Horizontal Mounting - DO-13 (DO-202AA)
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1N5665A Details

  • Manufacturer Part Number:

    1N5665A

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Transferred

  • Part Package Code:

    DO-13

  • Package Description:

    HERMETIC SEALED, METAL GLASS, DO-13, 2 PIN

  • Pin Count:

    2

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.50

  • Manufacturer:

    Microsemi Corporation (now Microchip)

  • Breakdown Voltage-Max:

    210 V

  • Breakdown Voltage-Min:

    190 V

  • Case Connection:

    CATHODE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    TRANS VOLTAGE SUPPRESSOR DIODE

  • JEDEC-95 Code:

    DO-202AA

  • JESD-30 Code:

    O-MALF-W2

  • JESD-609 Code:

    e0

  • Non-rep Peak Rev Power Dis-Max:

    1500 W

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -65 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    LONG FORM

  • Polarity:

    UNIDIRECTIONAL

  • Power Dissipation-Max:

    1 W

  • Qualification Status:

    Not Qualified

  • Rep Pk Reverse Voltage-Max:

    171 V

  • Surface Mount:

    NO

  • Technology:

    AVALANCHE

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    WIRE

  • Terminal Position:

    AXIAL

1N5665A Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 1N5665A is -65°C to 175°C, although it can withstand storage temperatures from -65°C to 200°C.
  • To ensure proper soldering, use a soldering iron with a temperature of 250°C to 260°C, and apply a small amount of solder to the leads. Avoid applying excessive heat or force, which can damage the device.
  • Yes, the 1N5665A is a radiation-hardened device, making it suitable for use in high-reliability and aerospace applications. However, it's essential to follow the manufacturer's guidelines and testing procedures to ensure compliance with specific industry standards.
  • Handle the 1N5665A by the body, avoiding touching the leads or glass seal. Store the devices in a clean, dry environment, away from direct sunlight and moisture. Use anti-static packaging and follow ESD precautions to prevent damage.
  • The 1N5665A has a maximum voltage rating of 3.6 kV. While it can be used in high-voltage applications, it's essential to ensure the device is properly derated and used within its specified voltage and current limits to prevent damage or failure.

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1N5665A Overview

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1N5665A Alternates

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Part Image JANTX1N5665A Microchip Technology Inc

Trans Voltage Suppressor Diode, 171W, Unidirectional, 1 Element, Silicon, DO-202AA
Part Image MSPLC170A Microchip Technology Inc

Trans Voltage Suppressor Diode, 1500W, 170V V(RWM), Unidirectional, 1 Element, Silicon, DO-202AA
Part Image MQLC170A Microsemi Corporation (now Microchip)

Trans Voltage Suppressor Diode, 1500W, 170V V(RWM), Unidirectional, 1 Element, Silicon, DO-202AA
Part Image JANTXV1N5665A Vishay Semiconductors

Trans Voltage Suppressor Diode, 1500W, 171V V(RWM), Unidirectional, 1 Element, Silicon, DO-13
Part Image 1N5665A Silicon Transistor Corporation

Trans Voltage Suppressor Diode, 1500W, 171V V(RWM), Unidirectional, 1 Element, Silicon, DO-13
For a full list of alternate parts for 1N5665A, check out Findchips.com