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1N5804 - Microsemi Corporation

Description: Rectifier Diode, 100 Volt, Axial-4

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PCB Footprints
1N5804 - Microsemi Corporation PCB footprint - Diodes, Axial Diameter Horizontal Mounting - Diodes, Axial Diameter Horizontal Mounting - 1N5804
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3D Models
1N5804 - Microsemi Corporation  - 3D model - Diodes, Axial Diameter Horizontal Mounting - 1N5804
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1N5804 Details

  • Manufacturer Part Number:

    1N5804

  • Part Life Cycle Code:

    Transferred

  • Package Description:

    HERMETIC SEALED, GLASS PACKAGE-2

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Manufacturer:

    Microsemi Corporation (now Microchip)

  • Additional Feature:

    HIGH RELIABILITY

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • JESD-30 Code:

    O-LALF-W2

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -65 °C

  • Output Current-Max:

    1 A

  • Package Body Material:

    GLASS

  • Package Shape:

    ROUND

  • Package Style:

    LONG FORM

  • Rep Pk Reverse Voltage-Max:

    100 V

  • Reverse Recovery Time-Max:

    0.025 µs

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    WIRE

  • Terminal Position:

    AXIAL

1N5804 Frequently Asked Questions (FAQs)

  • The 1N5804 has a maximum surge current rating of 100A for a 1ms pulse width.
  • Yes, the 1N5804 is designed for high-reliability applications and is screened to NASA-level standards.
  • The thermal resistance of the 1N5804 is 10°C/W junction-to-lead and 50°C/W junction-to-ambient.
  • Yes, the 1N5804 is rated for operation up to 200°C, making it suitable for high-temperature environments.
  • Yes, the 1N5804 is radiation-hardened and can withstand total ionizing dose (TID) up to 100 krad(Si).

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1N5804 Overview

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