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2N5686G - onsemi

Description: High Current Capability - IC Continuous = 50 Amperes.; DC Current Gain - hFE = 15-60 @ IC = 25 Adc; Low Collector?Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc; Pb-Free Packages are Available

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2N5686G Overview

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2N5686G Alternates

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Image	Part Number	Model
	2N5686 SPC Multicomp Power Bipolar Transistor, 50A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin
	JAN2N5686 Microsemi Corporation (now Microchip) Power Bipolar Transistor, 50A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin
	2N5686 Mospec Semiconductor Corp Power Bipolar Transistor, 50A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin
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