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2N6338G - onsemi

Description: Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc; High DC Current Gain hFE = 30 - 120 @ IC = 10 Adc hFE = 12 (Min) @ IC = 25 Adc; High Collector-Emitter Sustaining Voltage VCEO(sus) = 100 V; Fast Switching Times @ IC = 10 Adc tr = 0.3 µs (Max) ts = 1.0 µs (Max) tf = 0.25 µs (Max); Pb-free package

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Part Image 2N6338 onsemi

Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin

Part Image 2N6338 Advanced Semiconductor Inc

Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin