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2SJ551STL-E Renesas Electronics Corporation

Power Field-Effect Transistor, 18A I(D), 60V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

2SJ551S-E Renesas Electronics Corporation

Power Field-Effect Transistor, 18A I(D), 60V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

2SJ551S Renesas Electronics Corporation

Power Field-Effect Transistor, 18A I(D), 60V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET


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Image	Part Number	Model
	2SJ551STL-E Renesas Electronics Corporation Power Field-Effect Transistor, 18A I(D), 60V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
	2SJ551S-E Renesas Electronics Corporation Power Field-Effect Transistor, 18A I(D), 60V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
	2SJ551S Renesas Electronics Corporation Power Field-Effect Transistor, 18A I(D), 60V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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2SJ551STR-E - Renesas Electronics

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Aluminium Electrolytic Capacitor

Axial Diameter Horizontal Mount

BGA

Chip Array

Chip Non-Polarised

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Connector

Dual-In-Line Sockets

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Header, Shrouded

Header, Unshrouded

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Moulded Polarised

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QFP-PLCC

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SIL-MIL

Small Outline Diode

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Transistor Outline, Vertical

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