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AT25XE041B-MHN-T - Renesas Electronics

Description: The AT25XE041B is a member of our System Enhancing class of code and data storage solutions. It is designed for all system memory tasks ranging from boot/code shadowing to data logging and includes the 256-byte page Erase feature that enables efficient, lower energy datalogging.

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AT25XE041B-MHN-T Details

  • Manufacturer Part Number:

    AT25XE041B-MHN-T

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFN

  • Package Description:

    UDFN-8

  • Country Of Origin:

    Taiwan

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    5

  • Clock Frequency-Max (fCLK):

    85 MHz

  • JESD-30 Code:

    R-PDSO-N8

  • Length:

    6 mm

  • Memory Density:

    4194304 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    8

  • Moisture Sensitivity Level:

    1

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Number of Words:

    524288 words

  • Number of Words Code:

    512000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    512KX8

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    HVSON

  • Package Equivalence Code:

    SOLCC8,.25

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

  • Parallel/Serial:

    SERIAL

  • Programming Voltage:

    1.8 V

  • Seated Height-Max:

    0.6 mm

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    1.65 V

  • Supply Voltage-Nom (Vsup):

    1.8 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Form:

    NO LEAD

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    DUAL

  • Width:

    5 mm

AT25XE041B-MHN-T Frequently Asked Questions (FAQs)

  • The AT25XE041B-MHN-T has a maximum of 100,000 erase cycles per sector, and 10,000 erase cycles per block.
  • To handle page write buffer underrun errors, ensure that the page write buffer is fully loaded with data before initiating the write operation. Also, use the status register to monitor the write operation and detect any errors.
  • The recommended power-up sequence is to apply VCC first, followed by VPP (if used), and then the clock signal. This ensures proper device initialization and prevents latch-up conditions.
  • Wear leveling can be implemented by distributing write operations across the entire memory array, using techniques such as dynamic wear leveling or static wear leveling. This helps to ensure that no single sector or block is over-erased, thereby extending the device's lifespan.
  • The WP# (Write Protect) pin is used to prevent accidental writes to the status register. When WP# is low, the status register is write-protected. To use it, connect WP# to VCC or VSS as required, and ensure that the pin is properly terminated to prevent noise or oscillations.

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Flash, 512KX8, PDSO8