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AT25XE321D-SSHN-B - Renesas Electronics

Description: The AT25XE321D is a member of our System Enhancing class of code and data storage solutions designed for all system memory tasks ranging from boot/code shadowing to data logging of frequently changing data. It is universally compatible and includes extra features that save system energy and overhead.

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AT25XE321D-SSHN-B - Renesas Electronics PCB footprint - Small Outline Packages - Small Outline Packages - 8S1, 8-lead (150 mil Narrow Body)
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AT25XE321D-SSHN-B Details

  • Manufacturer Part Number:

    AT25XE321D-SSHN-B

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-N

  • Country Of Origin:

    Philippines, Taiwan

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    6

  • Additional Feature:

    ALSO OPERATES AT 108MHZ @1.65V MINIMUM SUPPLY

  • Clock Frequency-Max (fCLK):

    133 MHz

  • Data Retention Time-Min:

    20

  • Endurance:

    100000 Write/Erase Cycles

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e4

  • Length:

    4.925 mm

  • Memory Density:

    33554432 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    8

  • Moisture Sensitivity Level:

    1

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Number of Words:

    4194304 words

  • Number of Words Code:

    4000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    4MX8

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    SOP

  • Package Equivalence Code:

    SOP8,.25

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Parallel/Serial:

    SERIAL

  • Peak Reflow Temperature (Cel):

    260

  • Programming Voltage:

    1.8 V

  • Seated Height-Max:

    1.75 mm

  • Serial Bus Type:

    SPI

  • Standby Current-Max:

    0.00005 A

  • Supply Current-Max:

    0.0165 mA

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.7 V

  • Supply Voltage-Nom (Vsup):

    3.3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    DUAL

  • Type:

    NOR TYPE

  • Width:

    3.9 mm

  • Write Protection:

    HARDWARE/SOFTWARE

AT25XE321D-SSHN-B Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the AT25XE321D-SSHN-B is 2.7V to 3.6V, as specified in the datasheet. However, it's essential to note that the device can tolerate a voltage range of 2.5V to 3.7V for a short duration, but prolonged operation outside the recommended range may affect its performance and reliability.
  • During power-up, the HOLD pin should be kept high (VCC) until the power supply has stabilized. During power-down, the HOLD pin should be kept low (GND) to prevent any unwanted writes or accesses to the device. It's essential to follow the recommended power-up and power-down sequences to ensure the device operates correctly and to prevent data corruption.
  • The AT25XE321D-SSHN-B supports up to 100,000 write cycles per sector, with a total of 4,096 sectors. This means the device can support a total of 409,600,000 write cycles (100,000 cycles/sector * 4,096 sectors). However, it's essential to note that the actual number of write cycles may vary depending on the usage and operating conditions.
  • Wear leveling can be implemented by distributing write operations across the entire memory space, using techniques such as dynamic wear leveling or static wear leveling. This can be achieved through software or firmware implementation, and it's essential to consider the specific use case and requirements when designing a wear leveling strategy.
  • The recommended method for erasing the entire memory array is to use the Chip Erase command (0x60 or 0xC7). This command erases the entire memory array, including the status register and the protection registers. It's essential to follow the recommended erase procedure to ensure the device operates correctly and to prevent data corruption.

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