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AT45DB041E-MHN-T - Renesas Electronics

Description: The AT45DB041E DataFlash is a member of our system enhancing class of code and data storage solutions designed with an advanced dual SRAM buffer architecture that makes it the most efficient memory for data logging. It also incorporates a suite of advanced features that save system power, reduce processor overhead, simplify software development, and provide comprehensive data security and integrity options.

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AT45DB041E-MHN-T - Renesas Electronics PCB footprint - Small Outline No-lead - Small Outline No-lead - 8MA1 – UDFN-1
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AT45DB041E-MHN-T Details

  • Manufacturer Part Number:

    AT45DB041E-MHN-T

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DFN

  • Country Of Origin:

    Taiwan

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    5

  • Clock Frequency-Max (fCLK):

    85 MHz

  • Data Retention Time-Min:

    20

  • Endurance:

    100000 Write/Erase Cycles

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e4

  • Length:

    6 mm

  • Memory Density:

    4194304 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    1

  • Moisture Sensitivity Level:

    1

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Number of Words:

    4194304 words

  • Number of Words Code:

    4000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    4MX1

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    HVSON

  • Package Equivalence Code:

    SOLCC8,.25

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

  • Parallel/Serial:

    SERIAL

  • Programming Voltage:

    3 V

  • Qualification Status:

    Not Qualified

  • Seated Height-Max:

    0.6 mm

  • Serial Bus Type:

    SPI

  • Standby Current-Max:

    0.00004 A

  • Supply Current-Max:

    0.016 mA

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.3 V

  • Supply Voltage-Nom (Vsup):

    3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    NO LEAD

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    DUAL

  • Type:

    NOR TYPE

  • Width:

    5 mm

  • Write Protection:

    HARDWARE/SOFTWARE

AT45DB041E-MHN-T Frequently Asked Questions (FAQs)

  • The AT45DB041E-MHN-T has a maximum of 10,000 erase cycles per sector, and 100,000 erase cycles per device.
  • To handle page write buffer underrun errors, ensure that the page write buffer is fully loaded with data before initiating the page write operation. Also, verify that the correct page address is being used and that the device is not in a busy state.
  • The recommended method for detecting the end of a page write operation is to poll the RY/BY# pin or use the ENDBIT flag in the status register to determine when the operation is complete.
  • Yes, the AT45DB041E-MHN-T is compatible with 3.3V power supplies. However, ensure that the input signals are within the recommended voltage range of 2.7V to 3.6V.
  • Wear leveling can be implemented by tracking the number of erase cycles per sector and dynamically allocating data to sectors with fewer erase cycles. This can be done using a combination of software and hardware techniques.

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