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AT45DB081E-SHN-B - Renesas Electronics

Description: The AT45DB081E DataFlash is a member of our System Enhancing class of code and data storage solutions designed with an advanced dual SRAM buffer architecture that makes it the most efficient memory for data logging. It also incorporates a suite of advanced features that save system power, reduce processor overhead, simplify software development, and provide comprehensive data security and integrity options.

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AT45DB081E-SHN-B - Renesas Electronics PCB footprint - Small Outline Packages - Small Outline Packages - 8S2 - 8-lead, 0.208''Wide EIAJ SOIC
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AT45DB081E-SHN-B - Renesas Electronics  - 3D model - Small Outline Packages - 8S2 - 8-lead, 0.208''Wide EIAJ SOIC
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AT45DB081E-SHN-B Details

  • Manufacturer Part Number:

    AT45DB081E-SHN-B

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-W

  • Country Of Origin:

    Taiwan

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    5

  • Additional Feature:

    IT ALSO OPERATES WITH 1.7V MIN WITH 85 MHZ FREQUENCY;256K-BIT EXTRA FLASH AVAILABLE

  • Clock Frequency-Max (fCLK):

    133 MHz

  • Data Retention Time-Min:

    20

  • Endurance:

    100000 Write/Erase Cycles

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e4

  • Length:

    5.29 mm

  • Memory Density:

    8388608 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    8

  • Moisture Sensitivity Level:

    1

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Number of Words:

    1048576 words

  • Number of Words Code:

    1000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    1MX8

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    SOP

  • Package Equivalence Code:

    SOP8,.3

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Parallel/Serial:

    SERIAL

  • Peak Reflow Temperature (Cel):

    260

  • Programming Voltage:

    3 V

  • Qualification Status:

    Not Qualified

  • Seated Height-Max:

    2.16 mm

  • Serial Bus Type:

    SPI

  • Standby Current-Max:

    0.00004 A

  • Supply Current-Max:

    0.016 mA

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.3 V

  • Supply Voltage-Nom (Vsup):

    3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    DUAL

  • Type:

    NOR TYPE

  • Width:

    5.24 mm

  • Write Protection:

    HARDWARE/SOFTWARE

AT45DB081E-SHN-B Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the AT45DB081E-SHN-B is 2.7V to 3.6V.
  • When the device is in a power-down state, all internal operations, including page write operations, are suspended. To resume page write operations, the device must be brought out of power-down mode by asserting the CE# pin low.
  • The AT45DB081E-SHN-B supports up to 10,000 erase cycles per sector.
  • The status of a write or erase operation can be determined by polling the RY/BY# pin, which goes low when the operation is in progress and high when it is complete.
  • The WP# pin is a write protect pin that allows the user to protect the entire memory array from write operations. To enable write protection, tie the WP# pin to VCC. To disable write protection, tie the WP# pin to GND.

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