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AUIRF2804S-7P - Infineon

Description: MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms

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AUIRF2804S-7P - Infineon PCB footprint - Other - Other - AUIRF2804S-7P-1
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AUIRF2804S-7P Details

  • Manufacturer Part Number:

    AUIRF2804S-7P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    1050 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    240 A

  • Drain-source On Resistance-Max:

    0.0016 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263CB

  • JESD-30 Code:

    R-PSSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    330 W

  • Pulsed Drain Current-Max (IDM):

    1360 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

AUIRF2804S-7P Frequently Asked Questions (FAQs)

  • The AUIRF2804S-7P can operate up to 1 GHz, making it suitable for high-frequency applications.
  • To ensure proper biasing, follow the recommended voltage and current settings outlined in the datasheet, and consider using a voltage regulator to maintain a stable voltage supply.
  • The maximum power dissipation of the AUIRF2804S-7P is 1.4 W, so it's essential to ensure proper heat sinking and thermal management to prevent overheating.
  • Yes, the AUIRF2804S-7P is suitable for switching regulator applications due to its high-frequency capability and low RDS(on). However, ensure proper gate drive and layout to minimize switching losses.
  • To protect the device from ESD, follow proper handling and storage procedures, use ESD-safe materials, and consider implementing ESD protection circuits in your design.

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Part Image AUIRF2804STRR7P International Rectifier

Power Field-Effect Transistor, 240A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB

Part Image AUIRF2804S-7PS-7P Infineon Technologies AG

Power Field-Effect Transistor, 240A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET