Part Image

AUIRFP4568-E - Infineon

Description: MOSFET N-CH 150V 171A TO247AD

Download AUIRFP4568-E Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
AUIRFP4568-E - Infineon  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

AUIRFP4568-E Details

  • Manufacturer Part Number:

    AUIRFP4568-E

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    Germany, Mainland China, Mexico, Taiwan

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Additional Feature:

    ULTRA LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    763 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    171 A

  • Drain-source On Resistance-Max:

    0.0059 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    203 pF

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    517 W

  • Pulsed Drain Current-Max (IDM):

    684 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

AUIRFP4568-E Frequently Asked Questions (FAQs)

  • Infineon recommends a 2-layer or 4-layer PCB with a thermal via array under the device to ensure good thermal conductivity. A minimum of 10 thermal vias with a diameter of 0.3 mm is recommended.
  • The AUIRFP4568-E requires a bias voltage of 5V to 12V. Ensure the bias voltage is stable and decoupled with a 10uF capacitor to prevent oscillations. Also, ensure the input signal is properly terminated with a 50Ω resistor.
  • The AUIRFP4568-E is designed to operate up to 5.8 GHz, but the maximum operating frequency may vary depending on the specific application and PCB layout. It's recommended to consult with Infineon's application notes for specific guidance.
  • The AUIRFP4568-E has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures when handling the device. Use an ESD wrist strap or mat, and ensure the workspace is ESD-safe.
  • Store the AUIRFP4568-E in a dry, cool place away from direct sunlight. Avoid exposing the device to moisture, extreme temperatures, or physical stress. Handle the device by the package, not the leads, to prevent damage.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

AUIRFP4568-E Overview

Use the download button to access the AUIRFP4568-E 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like AUIRF, or try a keyword search, such as Power Field-Effect Transistors

Parts related to AUIRFP4568-E

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview