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AUIRL7766M2TR - Infineon

Description: INFINEON - AUIRL7766M2TR - MOSFET, AUTO, N-CH, 100V, DIRECTFETM4

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AUIRL7766M2TR - Infineon PCB footprint - Other - Other - DirectFET
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AUIRL7766M2TR Details

  • Manufacturer Part Number:

    AUIRL7766M2TR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-5

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    237 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.01 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XBCC-N5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    62.5 W

  • Pulsed Drain Current-Max (IDM):

    204 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

AUIRL7766M2TR Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance and ensure reliable operation.
  • The gate resistor value depends on the specific application requirements, such as switching frequency, voltage, and current. A general guideline is to use a value between 1 ohm and 10 ohms. Infineon's application note AN2013-03 provides a more detailed calculation method to determine the optimal gate resistor value.
  • Although the datasheet specifies a maximum voltage rating of 600V, the device can withstand voltage transients up to 650V for a short duration (typically < 1us). However, it's essential to ensure that the device is operated within the recommended voltage range to prevent damage or degradation.
  • Yes, the AUIRL7766M2TR can be used in a half-bridge configuration. However, it's crucial to ensure that the device is properly biased and that the gate-source voltage is within the recommended range to prevent unwanted turn-on or oscillations.
  • The recommended storage temperature range for the AUIRL7766M2TR is -40°C to 150°C. Storing the device outside this range may affect its reliability or performance.

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AUIRL7766M2TR Overview

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Power Field-Effect Transistor, 10A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET