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AUIRLL024ZTR - Infineon

Description: MOSFET Automotive MOSFET 55 MOSFET 55V 60mOhm

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PCB Footprints
AUIRLL024ZTR - Infineon PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT-223 (TO-261AA)
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3D Models
AUIRLL024ZTR - Infineon  - 3D model - SOT223 (3-Pin) - SOT-223 (TO-261AA)
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AUIRLL024ZTR Details

  • Manufacturer Part Number:

    AUIRLL024ZTR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Configuration:

    SINGLE

  • Drain Current-Max (ID):

    5 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Operating Temperature-Max:

    150 °C

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.8 W

  • Surface Mount:

    YES

AUIRLL024ZTR Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a heat sink or a thermal pad to ensure good heat dissipation.
  • Ensure proper heat sinking, use a thermally conductive material for the PCB, and follow the recommended thermal design guidelines. Also, consider using a thermal interface material (TIM) between the device and the heat sink.
  • Monitor the device's temperature, current, and voltage. Implement over-temperature protection (OTP), over-current protection (OCP), and under-voltage protection (UVP) to prevent damage and ensure reliable operation.
  • Consult the application notes and reference designs provided by Infineon. Optimize the PCB layout, component selection, and thermal design based on your specific application requirements.
  • Follow the recommended soldering temperature profile and assembly guidelines provided in the datasheet. Use a soldering iron with a temperature range of 220°C to 250°C, and ensure the device is handled by trained personnel to prevent damage.

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AUIRLL024ZTR Overview

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Part Image IRLL024Z International Rectifier

Power Field-Effect Transistor, 5A I(D), 55V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Part Image AUIRLL024ZTR International Rectifier

Power Field-Effect Transistor, 5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Part Image IRLL024Z Infineon Technologies AG

Power Field-Effect Transistor, 5A I(D), 55V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA