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AUIRLS4030 - Infineon

Description: AUIRLS4030 N-Channel MOSFET, 180 A, 100 V HEXFET, 3-Pin D2PAK Infineon

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PCB Footprints
AUIRLS4030 - Infineon PCB footprint - Other - Other - D2PAK(TO-263AB)
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AUIRLS4030 - Infineon  - 3D model - Other - D2PAK(TO-263AB)
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AUIRLS4030 Details

  • Manufacturer Part Number:

    AUIRLS4030

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    ROHS COMPLIANT, PLASTIC, D2PAK-3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    305 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    180 A

  • Drain-source On Resistance-Max:

    0.0043 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    370 W

  • Pulsed Drain Current-Max (IDM):

    730 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

AUIRLS4030 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the AUIRLS4030 is -40°C to 150°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking and ensuring good airflow around the device.
  • A good PCB layout practice for minimizing EMI is to keep the high-current paths short and away from sensitive analog circuits, and to use a solid ground plane to reduce radiation.
  • No, the AUIRLS4030 is rated for a maximum voltage of 40V. Exceeding this voltage can damage the device. For high-voltage applications, consider using a different device or consulting with an Infineon application engineer.
  • Implementing overcurrent protection (OCP) and overvoltage protection (OVP) circuits can help prevent damage to the device. Additionally, consider using a fuse or a current-limiting resistor in series with the device.

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AUIRLS4030 Overview

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Part Image CSD19536KTT Texas Instruments

Power Field-Effect Transistor, 200A I(D), 100V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRLS4030TRRPBF Infineon Technologies AG

Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRLS4030TRLPBF International Rectifier

Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image AUIRLS4030TRR International Rectifier

Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image AUIRLS4030TRL Infineon Technologies AG

Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

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