Infineon provides a recommended PCB layout in their application note AN2014-01, which includes guidelines for thermal vias, copper thickness, and component placement to ensure optimal thermal performance.
The selection of a gate driver depends on the specific application requirements. Infineon recommends using their own gate drivers, such as the 1EDC20I12MH or 1EDC60I12MH, which are optimized for the AUIRS21811S. Alternatively, other gate drivers from reputable manufacturers can be used, but ensure they meet the required voltage and current ratings.
According to Infineon's application note AN2014-01, the maximum allowed voltage imbalance between the high-side and low-side FETs is ±5V to ensure reliable operation and prevent damage to the device.
Overcurrent protection can be implemented using an external current sense resistor and a comparator or an MCU with an ADC. Infineon recommends using their TLE4961-3G or TLE4961-5G current sense amplifiers for accurate current measurement. The protection threshold and response time should be set according to the specific application requirements.
The recommended dead time for the AUIRS21811S is typically in the range of 100-500 ns, depending on the specific application and switching frequency. A longer dead time can help prevent shoot-through currents, but may also increase switching losses.
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