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BSC014N04LSATMA1 - Infineon

Description: MOSFETs N-Ch 40V 100A TDSON-8 FL OptiMOS

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BSC014N04LSATMA1 - Infineon  - 3D model
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BSC014N04LSATMA1 Details

  • Manufacturer Part Number:

    BSC014N04LSATMA1

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    8

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    26 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Additional Feature:

    ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    170 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    32 A

  • Drain-source On Resistance-Max:

    0.0019 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

BSC014N04LSATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for BSC014N04LSATMA1 is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink, ensuring good airflow, and keeping the device away from other heat sources.
  • A recommended PCB layout for BSC014N04LSATMA1 includes a solid ground plane, short and wide traces, and a heat sink attached to the device.
  • Yes, BSC014N04LSATMA1 is suitable for high-reliability applications due to its robust design and manufacturing process.
  • Handle the device by the body, avoid touching the pins, and store it in an electrostatic discharge (ESD) protective package.

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BSC014N04LSATMA1 Overview

Use the download button to access the BSC014N04LSATMA1 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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Power Field-Effect Transistor, 166A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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